Two-dimensional material as well as preparation method, preparation device and application thereof

Abstract

The invention relates to a two-dimensional material as well as a preparation method, a preparation device and application thereof. The preparation method utilizes a vertical chemical vapor depositionsystem, a gaseous precursor is reacted in the vertical direction through a substrate in a heating state, reacting is carried out, a two-dimensional material is formed on the surface of the substrate,and the surface of the substrate is perpendicular to the flowing direction of the gaseous precursor. According to the two-dimensional material, the two-dimensional material is grown by adopting a vertical chemical vapor deposition method compared with a traditional horizontal chemical vapor deposition method, the morphology, the thickness, the crystal domain size and the density distribution of the two-dimensional material on the substrate are more uniform, and the two-dimensional material has a better application prospect.

Description

technical field [0001] The invention relates to the field of preparation of two-dimensional materials, in particular to a two-dimensional material and its preparation method, preparation device and application. Background technique [0002] The progress of modern information technology depends to a large extent on the development of integrated circuits based on semiconductor silicon. At present, due to the limitations of physical laws such as short channel effects and manufacturing costs, the mainstream CMOS (complementary metal oxide semiconductor) technology is about to reach the 10nm technology node, and it is difficult to continue to improve, which also indicates that "Moore's Law" may face end. Therefore, exploring new channel materials and transistor technology with new principles in order to replace silicon-based CMOS technology has always been one of the mainstream research directions in the scientific and industrial circles. [0003] Since 2004, Professor Geim's r...

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Problems solved by technology

However, it is difficult to obtain large-area uniformly distributed two-dimensional materials through the traditional horizontal chemical vapor deposition method, because this growth method has inherent defects such as difficult control of precursors, uneven distribution of gas flow field and temperature field.

[0005] CN108546994A discloses a two-dimensional indium triselenide and its preparation method and application. The preparation method includes: placing the precursor containing selenium and indium on one side of the reaction furnace, and placing the growth substrate on the other side of the reaction furnace. On one side, perform chemical vapor deposition to obtain the two-dimensional In 2 Se 3 ; Wherein, the growth substrate is composed of substrates arranged side by side and the substrates are in contact with each other. This scheme adopts the traditional horizontal chemical vapor deposition method to grow the two-dimensional material, and the obtained two-dimensional material is deposited on the substrate The uniformity of distribution is poor, and the uniformity of thickness is also poor

[0006] CN104962990A discloses a two-dimensional nano SnSe 2 A method for preparing a crystalline material, wherein the chemical vapor deposition method is used to deposit SnSe with a required thickness on a substrate with elemental selenium and tin halide 2 crystal; wherein, the deposition equipment is a horizontal tube furnace, and an upstream low-temperature zone, a central temperature zone, and a downstream low-temperature zone are arranged in sequence, and the elemental selenium and tin halide are respectively independently but closely placed in the upstream low-temperature zone, and the substrate is placed in the downstream low temperature area; using the temperature difference in different temperature areas, elemental selenium vapor and tin halide vapor are formed in the upstream low temperature area; the two react to form SnSe 2 , and brought into the downstream temperature zone through the deposition carrier gas, and deposited on the substrate as two-dimensional nano-SnSe 2 Crystal material, the two-dimensional nano-SnSe prepared by this scheme 2 The distribution uniformity of crystal materials on the substrate surface is insufficient, and the above preparation method is not suitable for the preparation of large-area and uniformly distributed two-dimensional materials

[0007] Although the above-mentioned literature discloses some preparation methods of two-dimensional materials, there are still problems of uneven distribution and uneven thickness of the prepared crystals on the surface of the substrate, and the preparation of two-dimensional materials uniformly distributed in a large area cannot be realized. Therefore, , it is still of great significance to develop a preparation method suitable for large-area uniform distribution of two-dimensional materials

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