Solar cell with carbon germanium thin film as intrinsic layer and preparation method thereof

A solar cell and intrinsic layer technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of wide band gap and small absorption coefficient, and achieve the effects of easy operation, simple preparation process and novel structure

Inactive Publication Date: 2011-12-14
HARBIN INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The present invention aims to solve the existing problem that the intrinsic layer of amorphous silicon material has a wide band gap and relatively small absorption coefficient, and provides a solar cell whose intrinsic layer is a carbon-germanium thin film and a preparation method thereof

Method used

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  • Solar cell with carbon germanium thin film as intrinsic layer and preparation method thereof
  • Solar cell with carbon germanium thin film as intrinsic layer and preparation method thereof
  • Solar cell with carbon germanium thin film as intrinsic layer and preparation method thereof

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specific Embodiment approach 1

[0009] Specific implementation mode 1: Combination figure 1 This embodiment will be described. The intrinsic layer of this embodiment is a solar cell with a carbon germanium film, which includes a transparent substrate 1, a transparent conductive film 2, a P-type window layer 3, an intrinsic layer 4, and an N-type layer 5. The transparent conductive film 2 is provided on the transparent substrate. On the upper surface of the bottom 1, the P-type window layer 3 is provided on the upper surface of the transparent conductive film 2, the intrinsic layer 4 is provided on the upper surface of the P-type window layer 3, and the N-type layer 5 is provided on the upper surface of the intrinsic layer 4. On the upper surface; wherein the intrinsic layer 4 is a carbon germanium film.

[0010] figure 1 1 is a transparent substrate, 2 is a transparent conductive film, 3 is a P-type window layer, 4 is an intrinsic layer, and 5 is an N-type layer.

specific Embodiment approach 2

[0011] Specific embodiment 2: Specific embodiment 1 The method for preparing a solar cell whose intrinsic layer is a carbon germanium thin film is carried out according to the following steps: 1. The transparent substrate 1 is coated with a conductive transparent electric film 2; The transparent conductive film 2 on the substrate 1 is coated with a P-type window layer 3; 3. The transparent substrate 1 with the transparent conductive film 2 and the P-type window layer 3 is ultrasonically cleaned with acetone for 15-30 minutes, and then the quality The percentage concentration is 99.5% ethanol solution for 15-30 minutes, and finally with deionized water for 15-30 minutes; 4. The transparent substrate 1 with transparent conductive film 2 and P-type window layer 3 processed in step 3 In the vacuum degree is 1.0×10 -4 ~9.9×10 -4 Under the condition of Pa, heat to 25~700℃, then keep for 10~120 minutes and then pass in argon gas, and then under the condition of 3~5 Pa, the upper surfac...

specific Embodiment approach 3

[0013] Specific embodiment three: This embodiment is different from the specific embodiment two in that the ultrasonic cleaning in step three is 15 minutes. Others are the same as the second embodiment.

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Abstract

The invention discloses a method for preparing a solar cell with a carbon germanium thin film serving as an intrinsic layer, and relates to a solar cell and a method for preparing the solar cell. The invention aims to solve the problem that the traditional solar cell which takes an amorphous silicon material as the intrinsic layer has wide band gap and small absorption coefficient. The solar cell comprises a transparent substrate (1), a transparent conductive thin film (2), a P-type window layer (3), an intrinsic layer and an N-type layer (5). The method comprises the following steps of: plating the transparent conductive thin film (2) on the transparent substrate (1); plating the P-type window layer (3) on the transparent conductive thin film (2); cleaning, heating, preserving heat, introducing argon, backwashing and cleaning; preparing the intrinsic layer (4); and preparing the N-type layer (5) to complete the preparation of the solar cell with the carbon germanium thin film serving as the intrinsic layer. The solar cell disclosed by the invention is novel in structure, simple in preparation and easy to operate; the carbon germanium thin film serves as the intrinsic layer, has the advantages of narrow band gap and high optical absorption, and can improve the photoelectric transformation efficiency. The invention is applied to the field of solar cells.

Description

Technical field [0001] The invention relates to a solar cell and a preparation method thereof. Background technique [0002] More than 99% of the solar radiation spectrum of the upper boundary of the earth's atmosphere is between 0.15 and 4.0 microns in wavelength. About 50% of the solar radiation energy is in the visible spectral region (wavelength 0.4-0.76 microns), 7% is in the ultraviolet spectral region (wavelength <0.4 microns), and 43% is in the infrared spectral region (wavelength> 0.76 microns). In the current technology of amorphous silicon thin-film solar cells using the intrinsic layer as the absorber layer, the performance of the intrinsic layer seriously affects the working efficiency of the solar cell. Generally, two parameters are required for the intrinsic layer: one is its band gap width, and the other is its absorption coefficient. At present, amorphous silicon material is often used as the intrinsic layer. Its band gap is about 1.8 eV, and the correspo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/075H01L31/0264H01L31/18
CPCY02E10/50Y02E10/547Y02E10/548Y02P70/50
Inventor 朱嘉琦姜春竹贾振宇张雯婷韩杰才
Owner HARBIN INST OF TECH
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