Wafer Handling Deposition Shield Components

Abstract

Embodiments described herein generally relate to an apparatus and method for uniform sputter deposition of material onto the bottom and sidewalls of high aspect ratio features on a substrate. In one embodiment, a collimator positioned between a sputter target and a substrate support for mechanical and electrical connection with a shield member is provided. The collimator includes a central region and a peripheral region, wherein the collimator has a plurality of apertures extending therethrough, and wherein the apertures in the central region have a higher aspect ratio than the apertures in the peripheral region.

Description

technical field [0001] Embodiments of the invention generally relate to an apparatus and method for uniform sputter deposition of material onto the bottom and sidewalls of high aspect ratio features on a substrate. Background technique [0002] In the fabrication of integrated circuits, sputtering or physical vapor deposition (PVD) is a technique widely used to deposit thin metal layers on substrates. Layers that act as diffusion barrier, seed layer, primary conductor, antireflective coating, and etch stop layer are deposited using PVD. However, it is difficult to form a uniform thin film maintaining the shape of a substrate in which steps such as forming holes or grooves occur by PVD. In particular, the wide angular distribution of deposited sputtered atoms results in poor coverage in the bottom and sidewalls of features with high aspect ratios, such as holes and trenches. [0003] Collimator sputtering techniques were developed to allow deposition of thin films in the bo...

AI Technical Summary

Problems solved by technology

Unfortunately, PVD with known collimators incorporating small magnet magnetrons provides uneven deposition across the substrate

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