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Manufacturing method of photoelectric conversion device, photoelectric conversion device, manufacturing system of photoelectric conversion device, and method of use of photoelectric conversion device manufacturing system

A technology for a photoelectric conversion device and a manufacturing method, which can be applied in the fields of photovoltaic power generation, final product manufacturing, sustainable manufacturing/processing, etc., and can solve problems such as the degradation of the characteristics of the photoelectric conversion device.

Inactive Publication Date: 2011-12-28
ULVAC INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0036] In order to solve the problem that the characteristics of the photoelectric conversion device decrease as the number of processed substrates increases due to the influence of n-type impurities accumulated inside one reaction chamber, the present inventors conducted careful studies.

Method used

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  • Manufacturing method of photoelectric conversion device, photoelectric conversion device, manufacturing system of photoelectric conversion device, and method of use of photoelectric conversion device manufacturing system
  • Manufacturing method of photoelectric conversion device, photoelectric conversion device, manufacturing system of photoelectric conversion device, and method of use of photoelectric conversion device manufacturing system
  • Manufacturing method of photoelectric conversion device, photoelectric conversion device, manufacturing system of photoelectric conversion device, and method of use of photoelectric conversion device manufacturing system

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no. 1 approach

[0083] Figure 1A ~ Figure 1C It is a cross-sectional view illustrating a method of manufacturing a photoelectric conversion device of the present invention. figure 2 is a cross-sectional view showing a layer structure of a photoelectric conversion device manufactured according to the present invention.

[0084] First, if figure 2 As shown, in the photoelectric conversion device 10A ( 10 ) manufactured according to the manufacturing method of the present invention, the first photoelectric conversion unit 3 and the second photoelectric conversion unit 4 are sequentially stacked on the first surface 1 a (surface) of the substrate 1 . Furthermore, a back electrode 5 is formed on the second photoelectric conversion unit 4 . The first photoelectric conversion unit 3 and the second photoelectric conversion unit 4 respectively include a pin-type layer structure.

[0085] The substrate 1 is a light-transmissive insulating substrate made of, for example, glass, transparent resin, ...

no. 2 approach

[0160] Next, a second embodiment of the present invention will be described.

[0161] In addition, in the following description, the same code|symbol is attached|subjected to the same member as 1st Embodiment, and the description is abbreviate|omitted or simplified. In the second embodiment, configurations or methods that are different from those of the above-mentioned first embodiment will be mainly described.

[0162] Figure 4 It is a cross-sectional view showing a layer structure of a photoelectric conversion device manufactured by the manufacturing method of the second embodiment.

[0163] In the second photoelectric conversion unit 4 of the photoelectric conversion device 10B ( 10 ), an oxygen-containing p-type semiconductor layer 44B (p layer, third p-type semiconductor layer) is formed on the n-type semiconductor layer 43 (n layer).

[0164] The oxygen-containing p-type semiconductor layer 44B is formed by plasma CVD in the same chamber as the chamber for forming the...

Embodiment 1

[0181] A method of manufacturing the photoelectric conversion device in Example 1 will be described.

[0182] A p layer formed of an amorphous silicon-based thin film, a buffer layer, an i layer formed of an amorphous amorphous silicon thin film, and a layer containing microcrystalline silicon, which constitute the first photoelectric conversion unit, are sequentially formed on the substrate. The n layer, and the p layer including microcrystalline silicon constituting the second photoelectric conversion unit. The method of forming these layers uses a plurality of plasma CVD reaction chambers connected in a row, forms a layer in one plasma CVD reaction chamber by the plasma CVD method, and sequentially performs the process of transferring the substrate and the process of forming a film on the substrate, forming multiple layers. Afterwards, the p-layer constituting the second photoelectric conversion unit was exposed to the atmosphere, using (CO 2 +H 2 ) is used as a process ...

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Abstract

A photoelectric conversion device manufacturing method manufactures a photoelectric conversion device (10) in which a first photoelectric conversion unit (3) and a second photoelectric conversion unit (4) are sequentially stacked on a transparent-electroconductive film (2) formed on a substrate (1). The method includes: forming each of a first p-type semiconductor layer (31), a first i-type semiconductor layer (32), a first n-type semiconductor layer (33), and a second p-type semiconductor layer (41) in a plurality of first plasma CVD reaction chambers (62, 63, 64, 65); exposing the second p-type semiconductor layer (41) to an air atmosphere; supplying a gas including p-type impurities to inside a second plasma CVD reaction chamber (72) before forming of the second i-type semiconductor layer (42); forming the second i-type semiconductor layer (42) on the second p-type semiconductor layer (41) that was exposed to an air atmosphere, in the second plasma CVD reaction chamber (72); and forming the second n-type semiconductor layer (43) on the second i-type semiconductor layer (42).

Description

technical field [0001] The present invention relates to a method for manufacturing a photoelectric conversion device, a photoelectric conversion device, a manufacturing system for a photoelectric conversion device, and a method for using a photoelectric conversion device manufacturing system. In particular, the present invention relates to a technique for stably manufacturing a photoelectric conversion device with good performance without degrading characteristics even when the number of substrates to be processed is increased, and improving production cost and efficiency. [0002] This application claims priority based on Japanese Patent Application No. 2009-020859 filed on January 30, 2009, the contents of which are incorporated herein by reference. Background technique [0003] In recent years, photoelectric conversion devices are generally used in solar cells, photosensors, and the like, and in solar cells in particular, they have begun to spread widely from the viewpoin...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/04H01L31/076
CPCY02E10/545C23C16/24Y02E10/547C23C16/54H01L31/076H01L31/202H01L31/1824H01L31/1804Y02E10/548Y02P70/50C23C16/44H01L31/04H01L31/075H01L31/18
Inventor 内田宽人藤长徹志若井雅文小林忠正植喜信中村久三浅利伸齐藤一也松本浩一清水康男森胜彦
Owner ULVAC INC