Manufacturing method of photoelectric conversion device, photoelectric conversion device, manufacturing system of photoelectric conversion device, and method of use of photoelectric conversion device manufacturing system
A technology for a photoelectric conversion device and a manufacturing method, which can be applied in the fields of photovoltaic power generation, final product manufacturing, sustainable manufacturing/processing, etc., and can solve problems such as the degradation of the characteristics of the photoelectric conversion device.
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no. 1 approach
[0083] Figure 1A ~ Figure 1C It is a cross-sectional view illustrating a method of manufacturing a photoelectric conversion device of the present invention. figure 2 is a cross-sectional view showing a layer structure of a photoelectric conversion device manufactured according to the present invention.
[0084] First, if figure 2 As shown, in the photoelectric conversion device 10A ( 10 ) manufactured according to the manufacturing method of the present invention, the first photoelectric conversion unit 3 and the second photoelectric conversion unit 4 are sequentially stacked on the first surface 1 a (surface) of the substrate 1 . Furthermore, a back electrode 5 is formed on the second photoelectric conversion unit 4 . The first photoelectric conversion unit 3 and the second photoelectric conversion unit 4 respectively include a pin-type layer structure.
[0085] The substrate 1 is a light-transmissive insulating substrate made of, for example, glass, transparent resin, ...
no. 2 approach
[0160] Next, a second embodiment of the present invention will be described.
[0161] In addition, in the following description, the same code|symbol is attached|subjected to the same member as 1st Embodiment, and the description is abbreviate|omitted or simplified. In the second embodiment, configurations or methods that are different from those of the above-mentioned first embodiment will be mainly described.
[0162] Figure 4 It is a cross-sectional view showing a layer structure of a photoelectric conversion device manufactured by the manufacturing method of the second embodiment.
[0163] In the second photoelectric conversion unit 4 of the photoelectric conversion device 10B ( 10 ), an oxygen-containing p-type semiconductor layer 44B (p layer, third p-type semiconductor layer) is formed on the n-type semiconductor layer 43 (n layer).
[0164] The oxygen-containing p-type semiconductor layer 44B is formed by plasma CVD in the same chamber as the chamber for forming the...
Embodiment 1
[0181] A method of manufacturing the photoelectric conversion device in Example 1 will be described.
[0182] A p layer formed of an amorphous silicon-based thin film, a buffer layer, an i layer formed of an amorphous amorphous silicon thin film, and a layer containing microcrystalline silicon, which constitute the first photoelectric conversion unit, are sequentially formed on the substrate. The n layer, and the p layer including microcrystalline silicon constituting the second photoelectric conversion unit. The method of forming these layers uses a plurality of plasma CVD reaction chambers connected in a row, forms a layer in one plasma CVD reaction chamber by the plasma CVD method, and sequentially performs the process of transferring the substrate and the process of forming a film on the substrate, forming multiple layers. Afterwards, the p-layer constituting the second photoelectric conversion unit was exposed to the atmosphere, using (CO 2 +H 2 ) is used as a process ...
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