Integrated circuit device and method of manufacturing same

Abstract

An integrated circuit device is disclosed. The disclosed device provides improved control over a surface proximity and tip depth of integrated circuit devices. An exemplary integrated circuit device disclosed herein has a surface proximity of about 1 nm to about 3 nm and a tip depth of about 5 nm to about 10 nm. The integrated circuit device having such surface proximity and tip depth includes an epi source feature and an epi drain feature defined by a first facet and a second facet of a substrate in a first direction, such as a {111} crystallographic plane of the substrate, and a third facet of the substrate in a second direction, such as a {100} crystallographic plane of the substrate.

Description

technical field [0001] The present invention relates to several integrated circuit components and methods of making several integrated circuit components. Background technique [0002] The semiconductor integrated circuit (IC) industry has experienced rapid growth. In the course of integrated circuit development, functional density (ie, the number of interconnected elements per chip area) has generally has been increased. This size reduction process often offers the advantage of increased production efficiency and reduced associated costs. Such size reductions have also increased the complexity of handling and manufacturing integrated circuits, and similar developments in integrated circuit manufacturing are required in order to realize these advances. For example, as semiconductor components, such as metal-oxide-semiconductor field-effect transistors (MOSFETs), shrink in size through many technology nodes, epitaxial semiconductor materials have been utilized to implement...

AI Technical Summary

Problems solved by technology

Although existing methods have generally served their intended purpose, these techniques have not been completely satisfactory in all respects

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