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Gate driving thyristor circuit and electrostatic protection circuit

An electrostatic protection and thyristor technology, which is applied in the field of integrated circuit electrostatic protection circuit design, can solve problems such as the inability to meet the long-pulse width ESD electrostatic pulse discharge requirements, achieve strong electrostatic discharge capabilities, and promote the effect of triggering conduction

Active Publication Date: 2015-04-01
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Abstract
  • Description
  • Claims
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AI Technical Summary

Problems solved by technology

Solve the problem that the existing gate-controlled thyristors using RC coupling loops cannot meet the requirements of long pulse width ESD electrostatic pulse discharge

Method used

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  • Gate driving thyristor circuit and electrostatic protection circuit
  • Gate driving thyristor circuit and electrostatic protection circuit
  • Gate driving thyristor circuit and electrostatic protection circuit

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Embodiment Construction

[0033] The existing thyristor trigger voltage adjustment circuit utilizes the coupling effect of the RC coupling loop to couple the potential of the anode to the control grid of the gate-controlled thyristor, thereby reducing the thyristor trigger voltage. However, since the coupling effect is not continuous, the potential on the control grid will quickly hysteresis for a long-pulse ESD pulse, and the effect of reducing the trigger voltage of the thyristor is limited. Therefore, it does not meet the requirement of long-term electrostatic discharge. In the gate-driven thyristor circuit provided by the present invention, a forward-connected diode path is formed between the anode and the control gate and between the control gate and the base (P well) of the parasitic NPN transistor in the NMOS transistor, wherein the base passes through the P well The parasitic internal resistance of is connected to the cathode of the thyristor. Therefore, as long as the potential on the anode i...

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Abstract

The invention provides a gate driving thyristor circuit and an electrostatic protection circuit. The gate driving thyristor circuit comprises a gate control thyristor and a gate driving circuit, wherein the gate control thyristor comprises an anode, a cathode and a control gate; the gate driving circuit comprises a diode of which the positive end is connected to the anode and the negative end is connected to the control gate and a diode of which the positive end is connected to the control gate and the negative end is connected to a P pit in the bottom part of the control gate. The gate driving thyristor circuit is low in trigger voltage and high in response sensitivity, and is capable of continuously reducing the trigger voltage of the thyristor.

Description

technical field [0001] The invention relates to the design field of integrated circuit electrostatic protection circuits, in particular to a gate driving thyristor circuit and an electrostatic protection circuit. Background technique [0002] Nowadays, with the improvement of integrated circuit manufacturing process, the feature size of CMOS integrated circuits is getting smaller and smaller. However, subsequently, the protection ability of integrated circuits against electrostatic discharge (ESD, Electrostatic Discharge) is getting weaker and weaker, that is, as the size of devices becomes smaller and smaller, the electrostatic voltage that devices can withstand is also getting smaller and smaller. small. Moreover, since the static electricity in the working environment of the integrated circuit will not change due to the reduction of the size of the integrated circuit, compared with the large-scale integrated circuit, the integrated circuit manufactured by the deep submic...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/04H01L29/06
Inventor 单毅陈晓杰
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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