Characterization method for parasitical bipolar junction transistor of MOS (metal oxide semiconductor) transistor
A technology of MOS transistor and bipolar transistor, which is applied in the field of characteristic characterization of parasitic BJT, can solve the problems of complicated testing process, and achieve the effect of simplifying the testing process.
Active Publication Date: 2012-01-18
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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Abstract
The invention relates to a characterization method for a parasitical bipolar junction transistor of a MOS (metal oxide semiconductor) transistor. The method comprises the following steps: measuring a leakage current Id of the MOS transistor; measuring a gate induced drain leakage current Igidl of the MOS transistor; measuring a voltage Vds between a source electrode and a drain electrode of the MOS transistor, namely a voltage Vce between an emitting electrode and a collecting electrode of the parasitical bipolar junction transistor; according to the measured leakage current Id and the measured gate induced drain leakage current Igidl, calculating a current gain coefficient beta of the parasitical bipolar junction transistor by using a formula: Id = (1+beta) Igidl; and generating a fit function of the current gain coefficient beta of the parasitical bipolar junction transistor and the voltage Vce between the emitting electrode and the collecting electrode of the parasitical bipolar junction transistor. By using the testing method disclosed by the invention, an operation of contacting a body area of the MOS transistor can be omitted, and the test process is simple.
Application Domain
Individual semiconductor device testing
Technology Topic
Oxide semiconductorGain coefficient +5
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