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Reduction method of positive temperature coefficient thermistor

A technology of positive temperature coefficient and thermistor, applied in the field of reduction method of positive temperature coefficient thermistor, can solve difficult problems, reduce resistivity and other problems, achieve the effect of reducing production cost, avoiding waste and saving resources

Inactive Publication Date: 2012-02-01
SHANGHAI ZIYU ELECTRONICS CERAMICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the fluctuation, the resistivity fails to meet the requirements of use. Since the traditional PTCR is completely grown, it is difficult to reduce the resistivity by other methods.

Method used

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  • Reduction method of positive temperature coefficient thermistor
  • Reduction method of positive temperature coefficient thermistor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] The positive temperature coefficient thermistor waste sheet whose resistance value is higher than the requirement (the body composition is (Ba, Pb) TiO 3 , when sintering, add sintering aids and semiconducting elements Nb, Y) Place the chip in the heating furnace, use a vacuum pump to evacuate the furnace, and turn off the vacuum pump when the pressure is -0.2Mpa.

[0023] Fill the furnace with nitrogen (99.9% by volume), and stop filling the nitrogen when the pressure reaches +0.3Mpa.

[0024] Turn on the vacuum pump again, vacuumize for the second time, and turn off the vacuum pump when the pressure is -0.3Mpa.

[0025] Charge nitrogen gas (99.9% by volume) into the furnace for the second time, and stop charging nitrogen gas when the pressure reaches +0.4Mpa.

[0026] Raise the temperature in the furnace at a rate of 9°C / min. When the temperature in the furnace rises from room temperature to 300°C, adjust the heating rate to 2.5°C / min. When the temperature in the fur...

Embodiment 2

[0029] The positive temperature coefficient thermistor waste sheet whose resistance value is higher than the requirement (the body composition is (Ba, Pb) TiO 3 , when sintering, add sintering aids and semiconducting elements Nb, Y) Place the chip in the heating furnace, use a vacuum pump to evacuate the furnace, and turn off the vacuum pump when the pressure is -0.3Mpa.

[0030] Fill the furnace with nitrogen (99.9% by volume), and stop filling nitrogen when the pressure reaches +0.2Mpa.

[0031] Turn on the vacuum pump again, evacuate for the second time, and turn off the vacuum pump when the pressure is -0.2Mpa.

[0032] Charge nitrogen gas (99.9% by volume) into the furnace for the second time, and stop charging nitrogen gas when the pressure reaches +0.3Mpa.

[0033] Raise the temperature in the furnace at a rate of 9.5°C / min. When the temperature in the furnace rises from room temperature to 300°C, adjust the heating rate to 2.2°C / min. When the temperature in the furnac...

Embodiment 3

[0036] The positive temperature coefficient thermistor waste sheet whose resistance value is higher than the requirement (the body composition is (Ba, Pb) TiO 3 , when sintering, add sintering aids and semiconducting elements Nb, Y) Place the chip in the heating furnace, use a vacuum pump to evacuate the furnace, and turn off the vacuum pump when the pressure is -0.1Mpa.

[0037] Fill the furnace with nitrogen (99.9% by volume), and stop filling the nitrogen when the pressure reaches +0.4Mpa.

[0038] Turn on the vacuum pump again, vacuumize the second time, and turn off the vacuum pump when the pressure is -0.1Mpa.

[0039] Fill the furnace with nitrogen gas (99.9% by volume) for the second time, and stop filling nitrogen gas when the pressure reaches +0.2Mpa.

[0040] Raise the temperature in the furnace at a rate of 8.5°C / min. When the temperature in the furnace rises from room temperature to 305°C, adjust the heating rate to 2°C / min. When the temperature in the furnace re...

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Abstract

The invention relates to a manufacturing method of a positive temperature coefficient thermistor, and provides a reduction method of a positive temperature coefficient thermistor. The reduction method of a positive temperature coefficient thermistor comprises the following steps of heating a positive temperature coefficient thermistor in a nitrogen atmosphere to reduce resistivity of the positive temperature coefficient thermistor, carrying out vacuum-pumping and nitrogen filling repeatedly to enable nitrogen pressure in a heating furnace to reach a value of +0.1 to +0.4MPa, heating slowly, and carrying out heat preservation. The resistivity of the positive temperature coefficient thermistor treated by the reduction method can be reduced by 30 to 40%. The reduction method of a positive temperature coefficient thermistor can be utilized for treating a waste product having resistivity higher than required resistivity, can improve greatly a product yield, saves resources, avoids waste, and reduces production costs.

Description

[0001] technical field [0002] The invention relates to a manufacturing method of a positive temperature coefficient thermistor, in particular to a reduction method of the positive temperature coefficient thermistor, which can reduce the resistivity of the positive temperature coefficient thermistor. Background technique [0003] PTCR is also known as positive temperature coefficient thermistor, the body composition is (Ba, Pb) TiO 3 , Add sintering aids and semiconducting elements Nb and Y during sintering. [0004] During the semiconducting process of PTCR, grains begin to grow. During the growth process, due to differences in furnace temperature, differences in raw materials produced by different batches, and the inherent twin-crystal characteristics of PTCR, it is easy to cause irregular growth of crystal grains, resulting in fluctuations in the resistance of each batch. In the application of PTCR, under the same voltage, because the user has certain requirements on t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/64C04B35/462
Inventor 张宝胜
Owner SHANGHAI ZIYU ELECTRONICS CERAMICS