Light-emitting diode (LED) chip with flip chip structure and manufacturing method thereof
A technology of light-emitting diodes and manufacturing methods, applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of easily damaged chips and unsatisfactory bonding firmness, so as to improve thermal damage, reduce the influence of electrodes on light, The effect of improving heat dissipation efficiency
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[0022] The fabrication method of the flip-chip light emitting diode chip of the present invention will be described in detail below with reference to the accompanying drawings.
[0023] The manufacturing method of the light-emitting diode chip of flip-chip structure of the present invention comprises the following steps:
[0024] First, an N-type semiconductor layer, a quantum well layer, and a P-type semiconductor layer are sequentially grown on a semiconductor substrate by epitaxial method, and the first N electrode is made on the N-type semiconductor layer, and the P-type semiconductor layer is successively grown on the P-type semiconductor layer. Make the first P electrode for bonding, thus forming the chip structure to be bonded, such as figure 2 As shown, in order to increase the light extraction rate, a conductive layer and a mirror can be added between the P-type semiconductor layer and the first P-electrode. In this embodiment, the semiconductor substrate may be a s...
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