Method for spraying photoresist

A photoresist and nozzle technology, applied in the direction of photo-engraving process coating equipment, etc., can solve the problem of incomplete filling of patterns, and achieve the effect of saving time, ensuring uniformity and short moving path.

Inactive Publication Date: 2012-02-22
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
View PDF3 Cites 15 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Aiming at the deficiencies in the prior art, the present invention provides a method for spraying photoresist, which solves the problem in the prior art that the patterns are prone to incomplete filling when spraying photoresist

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for spraying photoresist
  • Method for spraying photoresist
  • Method for spraying photoresist

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0049] When the dispensing nozzle moves horizontally from the starting position along the radial direction of the wafer at a constant speed v, the rotation speed r of the wafer remains constant. The nozzle hovers at the start and end positions for a predetermined time, and moves horizontally at a constant speed v at other times.

[0050] In this embodiment, the dispensing nozzle moves horizontally along the radial direction from directly above any position in the annular region of the wafer from A to B, and stops above the center position O of the wafer. At this time, the rotation speed of the wafer is r. In the process of spraying photoresist on the above moving path, the nozzle first hovers at the initial position for a predetermined time, then moves horizontally along the radial direction at a constant speed v, and then hovers for a predetermined time above the center position O of the wafer. The photoresist (coating) process is over. At this point, the sprayed photoresis...

Embodiment 2

[0059] The difference from Embodiment 1 is that while the dispensing nozzle is moving horizontally, the rotation speed of the wafer can be dynamically adjusted according to the size of the wafer and the size of the graphics formed on the wafer.

[0060] The nozzle moves horizontally at a constant speed. When the nozzle is above the initial position of the wafer edge, the wafer rotates at an initial speed r1; after that, the wafer accelerates to r2 and rotates at a constant speed r2; when the When the nozzle moves horizontally above the center position of the wafer along the radial direction of the wafer, the wafer decelerates to the stop rotation speed r3.

[0061] When the dispensing nozzle moves horizontally from the starting position along the radial direction of the wafer at a constant speed v, in this embodiment, the dispensing nozzle moves along the radial direction directly above any position in the annular region from A to B of the wafer. direction to move horizontally...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a method for spraying photoresist. The method is characterized by comprising the following steps: providing a wafer to be sprayed; providing a nozzle used for spraying the photoresist on the surface of the wafer; and horizontally moving the nozzle along the radius direction of the wafer and spraying the photoresist, wherein the nozzle is horizontally moved above the central position of the wafer from the position above the initial position of the wafer edge. The method has the following technical effect: the photoresist-dripping nozzle is horizontally moved along the radius direction of the wafer and sprays photoresist and the rotation speed of the wafer and the horizontal movement speed of the nozzle are executed according to the set technological parameters, thus solving the problem that the patterns on the wafer are not completely filled during photoresist spraying.

Description

technical field [0001] The invention relates to the field of integrated circuit manufacturing and processing, in particular to a method for uniformly spraying photoresist on a semiconductor substrate. Background technique [0002] In general, the uniformity of photoresist on a semiconductor substrate is a very critical quality parameter when manufacturing semiconductor devices. If the photoresist is not uniformly coated, problems such as poor resolution will be caused in subsequent processes, thereby directly affecting the photolithography effect. [0003] The method used to uniformly coat photoresist includes spin coating (Spin Coating) method in which a wafer is placed on a disc-shaped support and the substrate is rotated after the photoresist is dropped in the center of the wafer , so that the photoresist is flattened on the wafer surface under the action of centrifugal force. [0004] In the prior art, two gluing methods are generally used, static gluing and dynamic gl...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/16
Inventor 钟政
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap