The present invention will be further described below with reference to the drawings and embodiments.
 figure 2 It is a schematic diagram of the structure of the resistance-driven organic light emitting display device of the present invention; image 3 It is a schematic diagram of the pixel equivalent circuit of the resistance-driven organic light-emitting display device of the present invention.
 Please refer to Figure 1~ image 3 The OLED lighting substrate of the present invention includes a substrate 1, on which an anode 3, an organic functional layer 4, and a cathode 5 are sequentially arranged, wherein a resistance layer is arranged between the substrate 1 and the anode 3, and the resistance layer Divided into a plurality of block resistors, the anode 3 is divided into a plurality of sub-anodes, each sub-anode is connected in series with a block resistor, and the plurality of block resistors are connected together by interconnecting wires.
 figure 2 The medium resistance driving organic light emitting display device 101 is composed of an array of OLED lighting pixels 102. All the OLED lighting pixels 102 are connected to the first power supply voltage ELVDD and the second power supply voltage ELVSS. The resistance device and the OLED device are connected in series to the first power supply voltage ELVDD and the second power supply voltage ELVSS, respectively. Due to the current limiting effect of the series resistor, the short-circuited OLED pixel device will not affect the normal operation of other OLED pixel devices, which greatly improves the yield and reliability of the entire OLED lighting device. The current converging effect is weakened, the anode and cathode are easily short-circuited, the electrode is easily burned out, and the problem of uneven light emission is reduced.
 Figure 4 It is a schematic diagram of the manufacturing method of the OLED lighting substrate of the present invention.
 Please continue to refer Figure 4 , The manufacturing method of the OLED lighting substrate of the present invention includes the following steps:
 Step S401: Sputtering or other methods are used to deposit a first metal layer on a substrate. The substrate is an insulating substrate, such as a glass substrate; the first metal layer can be selected from materials such as molybdenum tungsten, molybdenum aluminum molybdenum, and magnesium silver alloy; The first photoresist layer is coated on the first metal layer. After exposure and development, dry or wet etching is used to form power interconnection patterns and power terminals. The interconnection patterns can be grid-like, strip-like, or any other shape ; The original power connection terminal is now to be realized on the interconnection layer; go to step S402;
 Step S402, continue to form a first insulating layer on the etched first metal layer. The first insulating layer can be silicon dioxide, silicon nitride, tetraethyl orthosilicate (TEOS), etc.; the first insulating layer Completely cover the interconnection line, coat a second photoresist layer on the first insulating layer, and after exposure and development, dry or wet etching is used to form a contact hole pattern, the shape of the contact hole pattern is any shape; go to step S403;
 Step S403, continue to form a resistive layer on the etched first insulating layer. The resistive layer can be polysilicon, indium tin oxide, etc.; a third photoresist layer is coated before the resistive layer is etched, and after exposure and development, dry etching is used Alternatively, a plurality of block-shaped resistive layer patterns are formed by wet etching, and the resistive layer patterns are connected to the power interconnection line patterns through contact hole patterns; the resistive layer patterns are preferably rectangular blocks, and the rectangular block resistors have a line width ranging from 1 nanometer to 1 meter. The smaller the width of the resistor, the greater the resistance of the resistor, and the smaller the current through the resistor. The length of the rectangular block resistor ranges from 1 nanometer to 1 meter. The greater the length of the resistor, the greater the resistance of the resistor. The larger the value, the smaller the current through the resistor; for bottom emission technology, the area design of the rectangular block resistor can increase the light-emitting area of the luminescent material; go to step S404;
 Step S404, continue to form a second insulating layer on the etched resistance layer; the material used for the second insulating layer is the same as that of the first insulating layer, a fourth photoresist layer is coated on the second insulating layer, and after exposure and development , The through hole pattern is formed by dry or wet etching, and the shape of the through hole pattern is any shape; go to step S405
 Step S405, continue to form an anode layer on the etched second insulating layer; the anode layer may be indium tin oxide, magnesium silver alloy, etc.; the anode layer is connected to the resistance layer through the through hole pattern; before the anode material layer is etched The fifth photoresist layer is coated, and after exposure and development, a plurality of block anode layer patterns are formed by dry or wet etching. The shape of the anode layer pattern is preferably a plurality of rectangular block sub-anodes, and the size of the rectangular block sub-anodes is preferably equal to The rectangular block resistors are roughly the same in size; go to step S406;
 In step S406, an organic functional layer is sequentially formed on the etched anode layer and the cathode is covered on the anode to form an OLED lighting substrate.
 The OLED lighting substrate and the back cover are sealed to form an OLED lighting device.
 To sum up, in the prior art OLED lighting devices, the overall anode is basically formed by evaporation or deposition, but the formed large-area anode often has a current accumulation effect, and the large current after the accumulation is very easy As a result, the electrodes are burned out, and problems such as short circuit between the anode and the anode and uneven light emission occur. The cause of the current accumulation effect is that micro-defects are prone to exist during the formation of the cathode and anode, and the micro-defects will directly induce current accumulation. The second is the overall design of the cathode and anode currents, resulting in a large continuous area of the cathode and anode. The resistance of the anode and the anode are relatively small. Once the current on the entire anode is concentrated, the intensity of the concentrated current formed is too large. Micro-defects are difficult to completely avoid. Based on this, the present invention subdivides the entire anode by connecting a resistor in series between the power interconnection line and the anode. The resistor plays the role of circuit restriction and isolation of the OLED lighting pixel, weakens the current convergence effect and intensity, and reduces the easy short-circuit of the cathode and anode. , So as to solve the problems of electrode burnout and uneven light emission. Even if a short circuit occurs inside an OLED pixel device, due to the current limiting effect of the series resistor, the short-circuited OLED pixel device will not affect the normal operation of other OLED pixel devices, which greatly improves the yield and yield of the entire OLED lighting device. reliability.
 Although the present invention has been disclosed as above in the preferred embodiment, it is not intended to limit the present invention. Any person skilled in the art can make some modifications and improvements without departing from the spirit and scope of the present invention. Therefore, the present invention The scope of protection shall be as defined in the claims.