Planarization method for back gate process and device structure thereof
A planarization method and gate-last process technology, which are applied in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problem of difficulty in controlling gate height in gate-last process, and achieve precise control of height, reduction of resistance, and filling. The effect of increasing the space
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[0018] The embodiments of the present invention are described in detail below. Examples of the embodiments are shown in the accompanying drawings, in which the same or similar reference numerals indicate the same or similar elements or elements with the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary, and are only used to explain the present invention, and cannot be construed as limiting the present invention.
[0019] The following disclosure provides many different embodiments or examples for implementing different structures of the present invention. In order to simplify the disclosure of the present invention, the components and settings of specific examples are described below. Of course, they are only examples, and are not intended to limit the invention. In addition, the present invention may repeat reference numbers and / or letters in different examples. This repetition is for the purpose of simplificat...
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