Semiconductor device and method of producing same
A manufacturing method and semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, transistors, etc., can solve problems such as circuit malfunctions
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Embodiment approach 1
[0063] The semiconductor device of this embodiment has an internal circuit and a protection circuit using the same P-type semiconductor substrate. The above protection circuit has: a grounded first gate electrode, a grounded first source electrode, and a first drain electrode formed on the P-type semiconductor substrate; An N-type first diffusion region where the electrodes are connected; and a second diffusion region, which covers the first diffusion region in the P-type semiconductor substrate and is formed from below the first diffusion region to at least below the first gate electrode. part, and the P-type concentration is higher than the basic region of the P-type semiconductor substrate, and is grounded to the same level as the first diffusion region. And, the above-mentioned internal circuit has: a second gate electrode, a second source electrode, and a second drain electrode formed on the P-type semiconductor substrate; an N-type third diffusion region; and a P-type f...
Embodiment approach 2
[0117] Figure 5 It is a cross-sectional view showing the structure of the main part of the ESD protection element and the protected element included in the semiconductor device according to Embodiment 2 of the present invention. The semiconductor device 13 shown in this figure has an ESD protection element 13A and a protected element 1B. The ESD protection element 13A and the protected element 1B are formed on a continuous P-type Si substrate 101 . The semiconductor device 13 of this embodiment and the figure 1 Compared with the semiconductor device 1 of Embodiment 1 described in , only the structure of the diffusion region of the ESD protection element is different. Below, omit the description and figure 1 The same content as the ESD protection element 1A described in , only the differences are described.
[0118] In this embodiment, if Figure 5 As shown, the P-type diffusion region 162 in the P-type Si substrate 101 from the source electrode 111A to the drain electr...
Embodiment approach 3
[0134] Figure 7 It is a cross-sectional view showing the structure of the main part of the ESD protection element and the protected element included in the semiconductor device according to Embodiment 3 of the present invention. The semiconductor device 2 shown in this figure has an ESD protection element 2A and a protected element 2B. The ESD protection element 2A and the protected element 2B are formed on a continuous P-type Si substrate 101 . The semiconductor device 2 of this embodiment and the figure 1 Compared with the semiconductor device 1 of Embodiment 1 described in , only the structures of the diffusion regions of the ESD protection element and the protected element are different. Below, omit the description and figure 1 The same content as the ESD protection element 1A described in , only the differences are described.
[0135] The protected element 2B of this embodiment is used in a circuit operating at a medium voltage, and is composed of, for example, an ...
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Description
Claims
Application Information
- IPC
- H01L27/06; H01L21/822; H01L21/8234; H01L27/04; H01L27/088; H01L29/78
- CPC
- H01L21/823412; H01L21/823493; H01L29/7835; H01L29/66659; H01L29/78; H01L27/027; H01L21/823418
- Inventors
- 井ç’康文; 泽田和幸