Semiconductor device and method for fabricating semiconductor device

Abstract

The invention provides a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device has a pad structure with a ring-shaped stress buffer layer between a metal pad and an under-bump metallization (UBM) layer. The stress buffer layer is formed of a dielectric layer with a dielectric constant less than 3.5, a polymer layer, or an aluminum layer. The stress buffer layer is a circular ring, a square ring, an octagonal ring, or any other geometric ring.

Description

technical field [0001] The present invention generally relates to a semiconductor device, and more particularly to a semiconductor device having a bond pad (Pad / Bond Pad) structure, wherein the bond pad structure is provided with a stress buffer (Stress Buffer) layer. Background technique [0002] Modern integrated circuits (ICs) are indeed made up of millions of active components such as transistors and capacitors. These components are initially separated from each other, but then are interconnected (Interconnected) together to form a functional circuit. Typical interconnection structures include lateral interconnections (such as metal lines (conductors)) and vertical interconnections (such as vias and contacts). Interconnects are increasingly determining the performance and density limits of today's ICs. On top of the interconnect structures, bonding pads are formed and exposed on the surface of individual chips. The electrical connection via the bonding pad is used to ...

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Problems solved by technology

For example, the PI layer requires a high temperature and long-term curing process (Curing Process), which leads to the shrinkage of the large volume of PI, which in turn produces a large residual (Residual) stress on the silicon.

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