Thermal hydrogenation method of silicon tetrachloride
A silicon tetrachloride, hydrogen technology, applied in the direction of halogenated silicon compounds, halogenated silanes, etc., can solve the problems of immature technology and large investment cost, and achieve the effect of reducing costs
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Embodiment 1
[0016] (1) Pass the silicon tetrachloride liquid into the vaporizer, and pass the hydrogen gas at 100°C into the vaporizer to heat the silicon tetrachloride liquid evenly through the bubbling pores to obtain a mixed gas of silicon tetrachloride and hydrogen, and control the vaporizer The internal pressure is 300KPa, the gas temperature is 30°C, and the volume ratio of hydrogen gas and silicon tetrachloride gas at the vaporizer outlet is 3:1.
[0017] (2) Use electric heating to heat the surface temperature of the silicon core to 1100°C, transport the mixed gas of silicon tetrachloride and hydrogen to the reduction furnace, the pressure in the furnace is 150KPa, the reaction occurs on the surface of the silicon core, and solid silicon is deposited On the surface of the silicon core, polysilicon is obtained, and the reacted mixed gas is washed by bubbling, pressurized condensation, absorption and desorption, and activated carbon adsorption, and finally liquid trichlorosilane is o...
Embodiment 2
[0019] (1) Pass the silicon tetrachloride liquid into the vaporizer, and pass the hydrogen gas at 80°C into the vaporizer to heat the silicon tetrachloride liquid evenly through the bubbling pores to obtain a mixed gas of silicon tetrachloride and hydrogen, and control the vaporizer The internal pressure is 100KPa, the gas temperature is 10°C, and the volume ratio of hydrogen gas and silicon tetrachloride gas at the vaporizer outlet is 3:1.
[0020] (2) Use electric heating to heat the surface temperature of the silicon core to 1000°C, transport the mixed gas of silicon tetrachloride and hydrogen to the reduction furnace, the pressure in the furnace is 100KPa, the reaction occurs on the surface of the silicon core, and solid silicon is deposited On the surface of the silicon core, polysilicon is obtained, and the reacted mixed gas is washed by bubbling, pressurized condensation, absorption and desorption, and activated carbon adsorption, and finally liquid trichlorosilane is ob...
Embodiment 3
[0022] (1) Pass the silicon tetrachloride liquid into the vaporizer, and pass the hydrogen gas at 120°C into the vaporizer to heat the silicon tetrachloride liquid evenly through the bubbling pores to obtain a mixed gas of silicon tetrachloride and hydrogen, and control the vaporizer The internal pressure is 400KPa, the gas temperature is 50°C, and the volume ratio of hydrogen gas and silicon tetrachloride gas at the vaporizer outlet is 3:1.
[0023] (2) Use electric heating to heat the surface temperature of the silicon core to 1200°C, transport the mixed gas of silicon tetrachloride and hydrogen to the reduction furnace, the pressure in the furnace is 250KPa, the reaction occurs on the surface of the silicon core, and solid silicon is deposited On the surface of the silicon core, polysilicon is obtained, and the reacted mixed gas is washed by bubbling, pressurized condensation, absorption and desorption, and activated carbon adsorption, and finally liquid trichlorosilane is o...
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