Method for improving metal-insulation-metal (MIM) capacitance density in semiconductor device and device

A semiconductor, high-density technology, applied in the fields of semiconductor devices, semiconductor/solid-state device manufacturing, electric solid-state devices, etc., can solve the problems of not being able to improve the capacitance density and increase the manufacturing cost, so as to improve the capacitance density and strong compatibility. sexual effect

Active Publication Date: 2012-04-18
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] The purpose of the present invention is to solve the defect that the capacitance density cannot be improved well in the prior art, and to avoid increasing the manufacturing cost for improving the capacitance

Method used

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  • Method for improving metal-insulation-metal (MIM) capacitance density in semiconductor device and device
  • Method for improving metal-insulation-metal (MIM) capacitance density in semiconductor device and device
  • Method for improving metal-insulation-metal (MIM) capacitance density in semiconductor device and device

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Embodiment Construction

[0065] The present invention will be described in further detail below in conjunction with the accompanying drawings and specific embodiments. The specific embodiments described here are only used to explain the present invention, and are not used to limit the protection scope of the present invention.

[0066] Reference in turn Figure 2 to Figure 9 Shown is a schematic diagram of the structure when multiple steps of the method according to the present invention are executed. in, Figure 9 The block diagram shown is a semiconductor device containing high-density MIM (metal-insulator-metal) capacitors.

[0067] like figure 2 As shown, in one embodiment, in a method for increasing the capacitance density of MIM (metal-insulator-metal) in a semiconductor device provided by the present invention, the insulating substrate 1 is usually used as a certain interlayer dielectric in the semiconductor device Layer (ILD), in the insulating substrate 1 is usually provided with metal i...

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Abstract

The invention discloses a method for improving metal-insulation-metal (MIM) capacitance density in a semiconductor device and a semiconductor device containing high-density MIM capacitance. The method comprises the following steps that: an appearance layer is arranged on a stop layer of a substrate, the appearance layer is etched, so the appearance layer is provided with a plurality of grooves, and a capacitance substrate covering the appearance layer is in a appearance shape to increase the area of the capacitance substrate and to further increase the capacitance density. Due to the adoption of the method, compared with the prior art, the area of a wafer is not increased, and a strong compatibility can be realized compared with the traditional technique.

Description

technical field [0001] The invention relates to the capacitor structure included in the integrated circuit and the manufacturing field thereof, in particular to a method for increasing the capacitance density of an MIM in a semiconductor device and the device thereof. Background technique [0002] The continuous innovation of semiconductor integrated circuit manufacturing process technology has made the integration level higher and higher. While realizing as many devices as possible in the smallest possible area, it is also required to obtain the highest possible performance. [0003] Among them, capacitors are an important component unit in integrated circuits, and are widely used in chips such as memory, microwave, radio frequency, smart card, high voltage and filtering. With the reduction of chip size and the high demand for large capacitance performance, how to obtain high-density capacitance in a limited area has become a very attractive topic. [0004] The traditional...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02H01L21/28H01L29/41H01L29/92H01L27/08
Inventor 魏峥颖
Owner SHANGHAI HUALI MICROELECTRONICS CORP
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