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Method for improving HCI (Hot Carrier Injection) effect of high-K gate dielectric NMOS (N-Mental-Oxide-Semiconductor) by adopting gate-last process

A technology of gate-last process and gate dielectric, which is applied in the field of semiconductor manufacturing to achieve the effect of improving performance

Inactive Publication Date: 2012-04-18
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

Therefore, it is not enough to improve the HCI effect simply by changing the dose and energy of LDD ion implantation

Method used

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  • Method for improving HCI (Hot Carrier Injection) effect of high-K gate dielectric NMOS (N-Mental-Oxide-Semiconductor) by adopting gate-last process
  • Method for improving HCI (Hot Carrier Injection) effect of high-K gate dielectric NMOS (N-Mental-Oxide-Semiconductor) by adopting gate-last process
  • Method for improving HCI (Hot Carrier Injection) effect of high-K gate dielectric NMOS (N-Mental-Oxide-Semiconductor) by adopting gate-last process

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Embodiment Construction

[0025] see Figure 1a As shown in -g, the present invention improves the gate-last process high-K gate dielectric NMOS HCI method, which includes the following steps:

[0026] A first dielectric layer 102 and a polysilicon layer 103 are sequentially deposited on the substrate 1, wherein the substrate 1 is provided with an isolation groove 101, and its two sides are respectively a P-type substrate 11 and an N-type substrate 12; using photolithography and Etching process, etching polysilicon layer 102 and first dielectric layer 103 to form NMOS semiconductor device sample gate 104 and PMOS semiconductor device sample gate 105, wherein, NMOS semiconductor device sample gate 104 is formed by first dielectric layer 102 1 and polysilicon layer 103 1 Composition, PMOS semiconductor device sample gate 105 is made of the first dielectric layer 102 2 and polysilicon layer 103 2 Composition: using ion implantation process 106 to implant fluorine ions into the drain source region on the...

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Abstract

The invention generally relates to a method for improving the HCI (Hot Carrier Injection) effect of an NMOS (N-Mental-Oxide-Semiconductor) in the field of semiconductor manufacture, in particular to a method for improving the hot carrier effect of a high-K gate dielectric NMOS by adopting a gate-last process. In the processing procedure of the gate-last process, after a dummy gate is formed, fluorine ions are implanted in an NMOS device region through an ion injection process; and a stable chemical bond is formed at the interface by a heat treatment process, so that the performance of the NMOS resisting the HCI effect is effectively improved.

Description

technical field [0001] The present invention generally relates to a method for improving the reliability of NMOS in the field of semiconductor manufacturing, more precisely, the present invention relates to a method for improving the hot carrier effect of high-K gate dielectric NMOS in gate-last process. Background technique [0002] In order to reduce gate leakage current and improve device performance, high-K gate dielectric technology has been applied to nodes below 45 nanometers; however, since the interface between high-K gate dielectric and silicon has a large number of interface states, and these interface states cannot It will form unstable hydrogen bonds with hydrogen, resulting in a large number of interface states during the operation of NMOS devices, thereby changing the performance of MOS devices; that is, NMOS devices with high K gate dielectrics have very serious hot carrier injection (Hot Carrier Injection) , referred to as HCI) effect. [0003] The Hot Carr...

Claims

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Application Information

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IPC IPC(8): H01L21/336H01L21/28H01L21/265
Inventor 谢欣云陈玉文
Owner SHANGHAI HUALI MICROELECTRONICS CORP
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