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Solid-state imaging device, method for manufacturing the same, and electronic apparatus

A solid-state imaging device, pixel technology, applied in radiation control devices, televisions, circuits, etc., can solve problems such as device failure and corrosion

Inactive Publication Date: 2012-05-09
SONY SEMICON SOLUTIONS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0010] In addition, the pad metal of the pad electrode may dissolve and corrode, causing malfunction of the device in some cases

Method used

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  • Solid-state imaging device, method for manufacturing the same, and electronic apparatus
  • Solid-state imaging device, method for manufacturing the same, and electronic apparatus
  • Solid-state imaging device, method for manufacturing the same, and electronic apparatus

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Experimental program
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Embodiment Construction

[0071] Embodiments of the present invention will be described below with reference to the drawings.

[0072] (A) Structure of equipment

[0073] (A-1) Structure of key parts of the camera

[0074] figure 1 is a schematic diagram showing the configuration of the camera 40 according to the embodiment of the present invention. figure 1 The general configuration of the camera 40 is schematically shown.

[0075] The camera 40 is electronic equipment, and includes a solid-state imaging device 1, an optical system 42, a control circuit unit 43, and a signal processing circuit unit 44, such as figure 1 shown.

[0076] The solid-state imaging device 1 is disposed on the upper surface of the substrate 501, such as figure 1 shown. The solid-state imaging device 1 is electrically connected to the substrate 501 with wiring 502 . A solid-state imaging device 1 that will be described in detail later is provided with a pad electrode (not shown) electrically connected to a wiring (n...

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Abstract

The invention discloses a solid-state imaging device, a method for manufacturing the same, and an electronic apparatus. The method for manufacturing a solid-state imaging device includes: forming pixels that receive incident light in a pixel array area of a substrate; forming pad electrodes in a peripheral area located around the pixel array area of the substrate; forming a carbon-based inorganic film on an upper surface of each of the pad electrodes including a connection surface electrically connected to an external component; forming a coated film that covers upper surfaces of the carbon-based inorganic films; and forming an opening above the connection surface of each of the pad electrodes to expose the connection surface.

Description

technical field [0001] The present invention relates to a solid-state imaging device, a manufacturing method thereof, and electronic equipment. Background technique [0002] Electronic equipment such as digital cameras include solid-state imaging devices. Examples of solid-state imaging devices include CMOS (Complementary Metal Oxide Semiconductor) imaging sensors and CCD (Charge Coupled Device) imaging sensors. [0003] In a solid-state imaging device, a pixel array region having a plurality of pixels arranged in a matrix is ​​provided on the surface of a semiconductor substrate. Each of the plurality of pixels is provided with a photoelectric converter. The photoelectric converter is, for example, a photodiode. The light-receiving surface of the photodiode receives light incident thereon via an optical system provided separately from the imaging device, and generates signal charges in a photoelectric conversion process. [0004] Among various solid-state imaging device...

Claims

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Application Information

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IPC IPC(8): H01L27/146
CPCH01L27/14629H01L27/14636H01L27/14621H01L27/14627H01L27/14683H01L2224/48091H01L27/1462H01L27/14625H01L27/146H01L27/14685H01L2924/13091H01L2924/00014H01L2924/00H04N25/00
Inventor 堀越浩
Owner SONY SEMICON SOLUTIONS CORP
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