Double-layer phase change resistance and forming method thereof as well as phase change memory and forming method thereof

A phase change memory and phase change resistor technology, applied in electrical components and other directions, can solve the problems of difficult opening process and small critical dimensions, and achieve the effects of reducing reset current, small critical dimensions, and improving performance

Active Publication Date: 2014-09-03
SEMICON MFG INT (SHANGHAI) CORP +1
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The problem solved by the present invention is that it is difficult to obtain an opening with a small critical size when forming a double-layer phase change resistor

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Double-layer phase change resistance and forming method thereof as well as phase change memory and forming method thereof
  • Double-layer phase change resistance and forming method thereof as well as phase change memory and forming method thereof
  • Double-layer phase change resistance and forming method thereof as well as phase change memory and forming method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0034] In the method for forming a double-layer phase change resistor according to the specific embodiment of the present invention, a first dielectric layer with a first opening is formed on the first layer of phase change resistor, and a second dielectric layer is formed on the sidewall of the first opening. The dielectric layer surrounds the second opening; a third dielectric layer is formed in the second opening, and an annular opening is formed between the third dielectric layer and the second dielectric layer; a second layer of phase change resistance is formed to cover the The first dielectric layer, the second dielectric layer and the third dielectric layer fill the annular opening. The phase-change resistors filled in the openings are the connection between the phase-change resistors of the second layer and the phase-change resistors of the first layer. By this method, it is easy to form a small ring-shaped opening with a critical size, so that the phase-change resisto...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention relates to a double-layer phase change resistance and a forming method of the double-layer phase change resistance as well as a phase change memory and a forming method of the phase change memory; the forming method of the double-layer phase change resistance comprises the following steps of: providing a substrate, and forming a first layer of phase change resistance on the substrate; forming a first dielectric layer with a first opening on the first layer of phase change resistance, wherein the first opening exposes the first layer of phase change resistance; forming a second dielectric layer, and covering the side wall of the first opening, wherein a second opening is formed by the second dielectric layer in a surrounding manner; forming a third dielectric layer in the second opening, and forming an annular opening between the third dielectric layer and the second dielectric layer; and forming a second layer of phase change resistance which covers the first dielectric layer, the second dielectric layer and the third dielectric layer and fills the annular opening. According to the forming method of the double-layer phase change resistance, the key size of a connecting part between the second layer of phase change resistance and the first layer of phase change resistance is ensured to be small, the performance of a PCRAM (Phase Change Random Access Memory) is increased, the reset current can be reduced, and the setting speed is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for forming a double-layer phase-change resistor in a phase-change memory, a double-layer phase-change resistor, a method for forming a phase-change memory, and a phase-change memory. Background technique [0002] With the development of information technology, the demand for storage devices is increasing, which promotes the development of storage devices in the direction of high performance, low voltage, low power consumption, high speed and high density. Phase change memory (PCRAM, phase change Random Access Memory) is a new generation of non-volatile memory developed on the basis of CMOS integrated circuits, which uses an alloy of one or more elements of group V or group VI in the periodic table As a phase-change resistor, the phase-change resistor is used as a memory unit, and the phase-change resistor can quickly change from an ordered crystalline state (low ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00
Inventor 李凡张海洋
Owner SEMICON MFG INT (SHANGHAI) CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products