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Method for spatially determining the series resistance of a semiconductor structure

A technology of series resistance and semiconductor, which is applied in the field of dispersive measurement of series resistance of semiconductor structures, and can solve problems such as the reduction of solar cell efficiency

Active Publication Date: 2012-05-09
FRAUNHOFER GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG EV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] Series resistance is an important parameter used to describe solar cells because high series resistance often leads to lower efficiency of solar cells

Method used

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  • Method for spatially determining the series resistance of a semiconductor structure
  • Method for spatially determining the series resistance of a semiconductor structure
  • Method for spatially determining the series resistance of a semiconductor structure

Examples

Experimental program
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Embodiment Construction

[0071] Below according to an embodiment and figure 1 Further features and preferences of the method according to the invention will be explained.

[0072] figure 1 A schematic diagram of a measuring device for carrying out an embodiment of the method according to the invention is shown.

[0073] The polycrystalline silicon solar cell 1 has a grid-shaped metal connection structure on its front side 1 a and has extremely flat rear contacts on the opposite rear side. A voltage is given between the front contact and the back contact of the solar cell 1 by an adjustable power supply 3 to form electroluminescence.

[0074] The CCD camera 2 performs discrete measurements of the electroluminescence based on the front side 1 a of the solar cell 1 . The CCD camera 2 includes a CCD chip with a square pixel grid, wherein a dot is assigned to each pixel via the lens 2 a, said dot being located on the front side 1 a of the solar cell 1 .

[0075] Furthermore, the measuring device includ...

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PUM

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Abstract

The invention relates to a method for spatially determining the series resistance of a semiconductor structure by generating luminescent radiation in the semiconductor structure under measurement conditions A and B, by determining a local calibration parameter C V,i for a plurality of prescribed locations of the semiconductor structure and determining local series resistances R S,i for a plurality of prescribed locations of the semiconductor structure. It is essential that the local series resistances R S,i are each determined as a function of a global series resistance R Sg of the semiconductor structure that is identical for all local series resistances.

Description

technical field [0001] The invention relates to a method according to the preamble of claim 1 for the decentralized determination of the series resistance of a semiconductor structure, wherein the semiconductor structure is a solar cell or a precursor for the manufacture of a solar cell, the semiconductor structure comprising at least A pn junction and contacts for electrical contact. Background technique [0002] Series resistance is an important parameter for describing solar cells because high series resistance tends to result in reduced efficiency of solar cells. The total series resistance of the solar cell here consists of several components: e.g. the lateral resistance of the metal contact structure, the lateral resistance of the doped layer (e.g. emitter layer) and / or the contact resistance between the metal contact structure and the doped layer. The contact resistance can all belong to the total series resistance. [0003] For the characterization of solar cells a...

Claims

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Application Information

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IPC IPC(8): G01R31/26G01N21/64
CPCG01N21/6489G01R31/2605G01N21/66G01N21/9501H02S50/10Y02E10/50
Inventor J·豪恩席尔德M·格拉特哈尔S·瑞恩
Owner FRAUNHOFER GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG EV