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Method for deposition of nitrogen-doped silicon carbide film

A nitrogen-doped silicon carbide and silicon nitride film technology, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as poor bonding performance

Inactive Publication Date: 2012-05-16
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] However, in the manufacturing process, it is found that the silicon nitride film deposited by the current existing method has poor adhesion to the copper surface. In subsequent mechanical processing, it may be called a weak point. The bonding performance of silicon thin films to copper surfaces has become an important issue in today's semiconductor manufacturing processes

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  • Method for deposition of nitrogen-doped silicon carbide film
  • Method for deposition of nitrogen-doped silicon carbide film
  • Method for deposition of nitrogen-doped silicon carbide film

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Embodiment Construction

[0025] The specific embodiment of the present invention will be further described below in conjunction with accompanying drawing:

[0026] Figure 1-5 It is a schematic structural flow diagram of a method for depositing a nitrogen-doped silicon carbide film in the present invention; as Figure 1-5 Shown, carry out copper double damascene structure interconnection process, a kind of method for depositing nitrogen-doped silicon carbide thin film of the present invention:

[0027] Such as Figure 1-5 As shown, first, an interlayer dielectric layer made of nitrogen-doped silicon carbide is deposited on the substrate 11, and copper interconnection grooves are formed after photolithography and etching; metal copper 13 is deposited to fill the copper interconnection grooves. groove and cover the upper surface of the remaining interlayer dielectric layer 12, forming as figure 1 structure shown.

[0028] Secondly, a chemical mechanical polishing process is used to remove the metal co...

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Abstract

The invention relates to the semiconductor manufacturing field, especially to a method for deposition of a nitrogen-doped silicon carbide film. According to the method, silicon nitride is employed as a protection layer of an inner wall of a reaction chamber; because the silicon nitride does not contain carbon, during a pretreatment process before deposition of a nitrogen-doped silicon carbide film, it is avoided that the carbon is backwashed by a plasma to the surface of a wafer to form microdefects; and moreover, copper oxide on the copper surface can be well removed.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for depositing a nitrogen-doped silicon carbide film. Background technique [0002] With the gradual reduction of the critical dimensions of semiconductors in integrated circuits and the continuous improvement of their integration, the interconnection material in the back stage has gradually transitioned from aluminum to copper; because copper has lower resistivity and higher resistance to electromigration than aluminum capability, therefore, it has been widely used in deep submicron technology. Along with the application of copper, in order to reduce the parasitic capacitance in the interconnect structure, materials with low dielectric constant (Low-K) are widely used and developed. [0003] However, low dielectric constant materials are generally loose and have poor bonding performance with copper wires. In the prior art, a layer of copper dielectric protect...

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Application Information

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IPC IPC(8): H01L21/321H01L21/3215H01L21/768
Inventor 徐强张文广郑春生陈玉文
Owner SHANGHAI HUALI MICROELECTRONICS CORP