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LEDs with remote phosphor layer and reflective substrate

A phosphor layer and substrate technology, applied in semiconductor devices, electrical solid devices, electrical components, etc., can solve problems such as saturation, high photon density, and difficulties

Active Publication Date: 2016-11-16
LUMILEDS HLDG BV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Problems with using such non-remote phosphors include: 1) there is significant backscattering of blue light from the phosphor layer, which is then partially absorbed by the LED, submount, and metal electrodes; and metal electrodes partially absorb a significant amount of light generated by the phosphor; 3) the photon density is extremely high for high power LEDs and saturates the phosphor; 4) the LED is very hot and the phosphor can react to heat to cause phosphorescence the darkening of the polymeric binder layer (e.g. silicone) in which the phosphor particles are embedded; and 5) the color varies with the perspective change
There is poor light extraction from the LED to the air gap and light is absorbed by the substrate
It is also quite difficult to manufacture such devices economically

Method used

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  • LEDs with remote phosphor layer and reflective substrate
  • LEDs with remote phosphor layer and reflective substrate
  • LEDs with remote phosphor layer and reflective substrate

Examples

Experimental program
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Embodiment Construction

[0026] figure 1 A conventional flip-chip LED die 10 mounted on a portion of a substrate wafer 12 is illustrated. In flip chip, n and p contacts are formed on the same side of the LED die.

[0027] LED die 10 is formed from semiconductor epitaxial layers including n-layer 14, active layer 15 and p-layer 16 grown on a growth substrate such as a sapphire substrate. exist figure 1 In , the growth substrate is removed by laser lift-off, etching, grinding, or by other techniques. In one example, the epitaxial layer is GaN-based, and the active layer 15 emits blue light. LED dies that emit UV light are also applicable to the present invention.

[0028] Metal electrode 18 electrically contacts p-layer 16 and metal electrode 20 electrically contacts n-layer 14 . In one example, electrodes 18 and 20 are gold pads ultrasonically welded to anode and cathode metal pads 22 and 23 on ceramic substrate wafer 12 . Substrate wafer 12 has conductive vias 24 to bottom metal pads 26 and 28 f...

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PUM

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Abstract

A light emitting device including a flip-chip light emitting diode (LED) die mounted on a substrate (12). The top surface of the substrate has a reflective layer. A hemispherical first transparent layer (36) is molded over the LED die. A low index layer (68) is then provided over the first transparent layer to provide TIR of the phosphorescence. A hemispherical phosphor layer (70) is then provided over the low index layer. A lens (72) is then molded over the phosphor layer. In combination with TIR at the interface of the high-index phosphor layer and the underlying low-index layer, the reflection achieved by the reflective substrate layer greatly improves the efficiency of the lamp. Other materials can be used. The low index layer can be an air gap (46) or a molded layer (68). In addition to the low index layer, a distributed Bragg reflector (76) can be sputtered on top of the first transparent layer.

Description

technical field [0001] The present invention relates to light emitting diodes (LEDs) having a phosphor coating to wavelength convert the LED emission, and more particularly to techniques for improving the efficiency of LED lamps using remote phosphors. Background technique [0002] To produce white light using a blue LED die, it is known to deposit YAG phosphor directly on top of the LED die, for example by spraying or spin coating the phosphor in an adhesive, electrophoresis, applying the phosphor in a reflective cup, or otherwise. or red and green phosphors. It is also known to attach a preform of phosphor (eg, sintered phosphor powder) on top of the LED die. Such phosphor layers are non-remote as they directly contact the surface of the semiconductor die. The blue light leaked through the phosphor combines with the phosphorescence to produce white light. Problems with using such non-remote phosphors include: 1) there is significant backscattering of blue light from the...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/50H01L33/56H01L33/46
CPCH01L33/46H01L33/507H01L33/56H01L33/60H01L2933/0058H01L2924/181H01L2224/16225H01L2924/00014H01L33/54H01L2924/00011H01L2933/005H01L2924/00012H01L2224/0401H01L2933/0041
Inventor A.J.戴维R.I.阿尔达斯M.巴特沃思S.J.比尔休曾
Owner LUMILEDS HLDG BV