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Light-emitting diode structure, and manufacturing method thereof

A technology of light emitting diodes and manufacturing methods, applied to electrical components, circuits, semiconductor devices, etc., capable of solving problems affecting the stability of the light emitting diode structure 100, decreased adhesion of electrodes 114, abnormal electrical properties of the light emitting diode structure 100, etc.

Inactive Publication Date: 2012-05-23
佛山市奇明光电有限公司 +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] Whether it is acid-base erosion or plasma intrusion, the adhesion of the electrode 114 to the transparent conductive layer 106 will decrease.
Poor adhesion of the electrode 114 to the transparent conductive layer 106 will cause abnormal electrical properties of the LED structure 100 and affect the stability of the LED structure 100

Method used

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  • Light-emitting diode structure, and manufacturing method thereof
  • Light-emitting diode structure, and manufacturing method thereof
  • Light-emitting diode structure, and manufacturing method thereof

Examples

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Embodiment Construction

[0051] Please refer to Figure 2A to Figure 2E , which is a cross-sectional view illustrating a manufacturing process of a light emitting diode structure according to an embodiment of the present invention. In this embodiment, when fabricating the light emitting diode structure, the substrate 200 may be firstly provided for the growth of the epitaxial layer thereon. The material of the substrate 200 can be, for example, sapphire, silicon carbide (SiC), gallium arsenide (GaAs) or gallium nitride (GaN). Next, an epitaxial structure 208 is grown on the surface of the substrate 200 using, for example, an epitaxy method. In one embodiment, as Figure 2A As shown, the first electrical type semiconductor layer 202 , the light emitting layer 204 and the second electrical type semiconductor layer 206 can be sequentially grown on the substrate 200 by metal organic chemical vapor deposition (MOCVD) to form the epitaxial structure 208 . Wherein, the first electrical type is, for exampl...

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Abstract

The invention discloses a light-emitting diode structure, and a manufacturing method thereof. The light-emitting diode structure comprises a substrate, an epitaxy structure, a protection layer and at least one electrode. The epitaxy structure is arranged on the substrate. The protection layer covers the epitaxy structure, wherein the protection layer comprises at least one opening which is positioned on at least one part of the epitaxy structure. The at least one electrode is arranged in the at least one opening, and extends and covers the at least one part of the epitaxy structure, and the protection layer around the at least one opening.

Description

technical field [0001] The invention relates to a light-emitting element, and in particular to a light-emitting diode structure and a manufacturing method thereof. Background technique [0002] Please refer to figure 1 , which is a schematic cross-sectional view illustrating a conventional LED structure. The LED structure 100 mainly includes a substrate 102 , an epitaxial structure 104 , a transparent conductive layer 106 , an electrode 114 and a protection layer 116 . The epitaxial structure 104 is disposed on the substrate 102 . The transparent conductive layer 106 is disposed on the epitaxial structure 104 . The electrode 114 is disposed on a portion of the transparent conductive layer 106 . The electrode 114 is generally formed by stacking three metal layers 108 , 110 and 112 . The passivation layer 116 covers the exposed portions of the electrodes 114 and the transparent conductive layer 106 . The protective layer 116 has an opening 118 , wherein the opening 118 e...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/44H01L33/36H01L33/38H01L33/00
Inventor 余国辉庄文宏朱长信
Owner 佛山市奇明光电有限公司
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