Semiconductor device

Abstract

A semiconductor device includes a transistor array including a plurality of transistors each having a gate electrode extended in a first direction, the plurality of transistors being arranged in a second direction intersecting the first direction, and a pad electrode arranged in the first direction of the transistor array and electrically connected to source regions of the plurality of transistors.

Description

technical field [0001] Embodiments discussed herein relate to a semiconductor device including a power-intensive circuit element. Background technique [0002] A semiconductor device including large power consumption components such as a power amplifier circuit that has a large component heat generation due to operation. In a semiconductor device in which the packing density of circuit elements is increased for high-density mounting, improvement of radio-frequency characteristics, and the like, temperature rise due to operation is more significant. [0003] When the internal temperature of the element exceeds an allowable temperature, circuit characteristics such as high-frequency characteristics degrade, which is a cause of damage to the element in the worst case. Therefore, in a semiconductor device including components with large power consumption, how to radiate heat generated from the components is important. [0004] The following are relevant examples: Japanese Laid...

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