Adaptive inverse control system for chemical-mechanical polishing machine

A chemical-mechanical, self-adaptive inverse technology, applied to grinding automatic control devices, grinding machine parts, grinding/polishing equipment, etc., can solve problems such as pressure fluctuations in chemical-mechanical polishing CMP systems and reduced wafer polishing quality , to achieve the effect of reducing adverse effects, reducing system turbulence, and eliminating coupling

Inactive Publication Date: 2012-06-13
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The coupling of the polishing head chamber will cause pressure fluctuations in the chemical mechanical polishing CMP system, thereby reducing the polishing quality of the wafer

Method used

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  • Adaptive inverse control system for chemical-mechanical polishing machine
  • Adaptive inverse control system for chemical-mechanical polishing machine
  • Adaptive inverse control system for chemical-mechanical polishing machine

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Embodiment Construction

[0037] Embodiments of the present invention are described in detail below, examples of which are shown in the drawings, wherein the same or similar reference numerals designate the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the figures are exemplary only for explaining the present invention and should not be construed as limiting the present invention.

[0038] These and other aspects of embodiments of the invention will become apparent with reference to the following description and drawings. In these descriptions and drawings, some specific implementations of the embodiments of the present invention are specifically disclosed to represent some ways of implementing the principles of the embodiments of the present invention, but it should be understood that the scope of the embodiments of the present invention is not limited by this limit. On the contrary, the embodiments of the present...

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Abstract

The invention discloses an adaptive inverse control system for a chemical-mechanical polishing machine, which comprises a target pressure input device used for inputting target pressure of a polishing head chamber to a compound control device, a neural network identification device used for identifying a control model of a system based on the input pressure of the polishing head chamber input by the compound control device and the pressure output by the polishing head chamber, and the compound control device used for outputting the input pressure of the polishing head chamber based on the target pressure, the pressure output by the polishing head chamber and the control model. Each compound control unit comprises a neural network controller used for calculating neural network controlled quantity, a proportional integral controller used for generating proportional integral controlled quantity and a weighting device used for generating the input pressure of the polishing head chamber for the neural network controlled quantity and the proportional integral controlled quantity with the subsection variable-parameter control strategy. The adaptive inverse control system for the chemical-mechanical polishing machine is capable of reducing coupling among areas of the polishing head chamber through dynamic on-line decoupling of neurons.

Description

technical field [0001] The invention relates to the technical field of chemical mechanical polishing machine equipment, in particular to an adaptive inverse control system for chemical mechanical polishing machine. Background technique [0002] In IC (Integrated Circuit, integrated circuit) manufacturing technology, with the continuous improvement of product performance, the requirements for surface quality are getting higher and higher. As the basic material of integrated circuit chips, silicon wafers have surface roughness and surface flatness as one of the important factors affecting the etching line width of integrated circuits. Polishing is an important means of surface planarization. The CMP (Chemical mechanical polishing, chemical mechanical polishing machine) process most widely adopts the global planarization technology, and occupies an important position in the IC manufacturing technology. CMP is a combined technology of mechanical grinding and chemical etching. ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B24B51/00
Inventor 张辉门延武叶佩青路新春
Owner TSINGHUA UNIV
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