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Method for detecting photoresist defects

A photoresist and defect technology, used in optical testing flaws/defects, semiconductor/solid-state device testing/measurement, photoengraving process coating equipment, etc. The effect of saving process costs

Active Publication Date: 2012-06-13
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

[0005] Each photolithography needs to go through multiple steps such as coating photoresist, soft baking, exposure, post-exposure baking, development and dehydration baking, etc., the cycle period is long

Method used

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  • Method for detecting photoresist defects
  • Method for detecting photoresist defects
  • Method for detecting photoresist defects

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Embodiment Construction

[0032] In the photolithography process, any step may produce defects. Among them, the photoresist will be mixed with gas in the production and conveying equipment, and then pass through the filter, spray through the nozzle, etc., which will cause microbubbles to be incorporated into the originally qualified photoresist. However, microbubbles will be produced in the subsequent process until after developing, such as figure 1 Defect shown: Adjacent areas of photoresist that should be separated from each other are connected together.

[0033] Obviously, if the follow-up process is continued with such defects, the impact on device performance will be fatal. However, the existing detection methods need to go through the entire photolithography process: coating photoresist, baking, exposure, post-exposure baking, development, and dehydration baking to detect such defects, which not only increases the process cost, and a waste of time. Generally speaking, with such a detection met...

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Abstract

A method for detecting photoresist defects is disclosed. The method comprises the following steps: providing a semiconductor wafer and coating photoresist; pretesting the photoresist, calculating a defect quantity and obtaining a previous value; baking the semiconductor wafer which is coated by the photoresist according to reference time and reference temperature parameters; posttesting the photoresist, calculating the defect quantity and obtaining a computed value; comparing the previous value with the computed value so as to determine whether the photoresist is qualified, wherein the reference time and reference temperature parameters are determined by a parameter determination experiment. The method for detecting photoresist defects of the invention is fast and effective. Time can be saved. Whole technology cost can be substantially saved and a technology period can be shortened.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for detecting photoresist defects. Background technique [0002] The photolithography process is a key process for making semiconductor devices and integrated circuits with graphic structures, and its process quality directly affects the stability and improvement of parameters such as device yield, reliability, device performance, and service life. [0003] One of the most direct and important factors affecting these performance parameters is the various defects introduced throughout the photolithography process. With the continuous development of microelectronics processing technology, the update of process equipment and the improvement of process environment have made a qualitative leap in the quality of the current photolithography process. However, due to the particularity of its process and content, the mask pattern of the device is becoming mor...

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Application Information

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IPC IPC(8): H01L21/66G01N21/88G03F7/16
Inventor 胡林
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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