Repair method for damaged superlow dielectric constant thin film subjected to chemical mechanical polishing

Abstract

The invention provides a repair method for a damaged superlow dielectric constant thin film subjected to CMP (Chemical Mechanical Polishing), which comprises the following steps: a first dielectric resistor barrier and a first dielectric layer are sequentially deposited on a basal layer form top to bottom, and a first groove is formed in the first dielectric resistor barrier and the first dielectric layer through the etching technology; after diffusion restraining barriers are arranged on the side wall of the first groove and the surface of the first dielectric layer, and then metal is filled so as to form a first groove electrocoppering; the above structure is subjected to the CMP technology which is suspended on the surface of the first dielectric layer; the moisture of the above structure is removed through preheating treatment; and the surface of the structure is subjected to the original position plasma technology through the reducing gas combination, and then a second dielectric resistor barrier is started depositing. According to the repair method provided by the invention, the damage of the superlow dielectric constant thin film subjected to the CMP is reduced.

Description

technical field [0001] The invention relates to the field of semiconductor integrated circuit manufacturing, in particular to a method for repairing a damaged ultra-low dielectric constant film after chemical mechanical polishing, so as to reduce the loss of the ultra-low dielectric constant film after chemical mechanical polishing. Background technique [0002] With the continuous advancement of semiconductor integrated circuit technology, when semiconductor devices are reduced to the deep sub-micron range, high-performance integrated circuit chips need as low as possible connection capacitance (C), resistance (R), signal delay (RC time delay) and signal crosstalk. For this reason, low-resistance materials such as copper metal lines and interlayers and interlines of wiring are filled with low dielectric constant (low k dielectric) isolation materials to reduce the RC delay time caused by parasitic resistance and parasitic capacitance to improve device performance. However...

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Problems solved by technology

[0009] In order to solve the above problems, when using these low-resistance materials or low dielectric constant materials in the integrated circuit production process, it is necessary to find a solution to eliminate the damage to the low dielectric constant materials and metal surfaces caused by CMP and other processes. However, there are still considerable barriers in the actual implementation process, and it is urgent to introduce new methods that can effectively improve the above-mentioned defects to solve the problems faced by low-resistance materials such as copper and / or low dielectric constant materials when used in integrated circuit production processes. the main problem of

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