Cell membrane potential sensor based on standard complementary metal oxide semiconductor (CMOS) process

A potential sensor and cell membrane technology, applied in new biosensing systems and medical fields, can solve the problems of cell membrane potential sensing unit being incompatible with standard CMOS process and unfavorable integration, and achieve convenient signal processing, elimination of environmental noise and fixed mode. Noise, the effect of improving the ability of parallel processing

Inactive Publication Date: 2012-06-27
ZHEJIANG UNIV OF TECH
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Problems solved by technology

[0006] In order to overcome the deficiency that the existing cell membrane potential sensing unit is not compatible with the standard CMOS process and is not conducive to integra

Method used

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  • Cell membrane potential sensor based on standard complementary metal oxide semiconductor (CMOS) process
  • Cell membrane potential sensor based on standard complementary metal oxide semiconductor (CMOS) process
  • Cell membrane potential sensor based on standard complementary metal oxide semiconductor (CMOS) process

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example

[0034] Example: The MOS tube gate of the cell membrane potential sensing unit based on the standard CMOS process is connected to the metal 1 through the contact hole, and the metal 1 is connected to the metal 2 through the through hole. Electrode, the microelectrode can be coupled with the cell to conduct the cell membrane potential, such as figure 1 shown. Because the cell membrane potential signal is relatively weak, a differential amplifier circuit is designed to preprocess it, and a PMOS tube is used as the input tube structure to improve the anti-noise ability of the circuit. Considering the instability of the sensor itself and the large amount of solution noise introduced, the output adopts a differential mode, one is used as a sensing signal, and the other is used as a reference signal. The difference between the two signals can eliminate part of the signal conversion circuit. fixed pattern noise, correlated subsampling circuit structures such as figure 2 shown.

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Abstract

The invention relates to a cell membrane potential sensor based on a standard complementary metal oxide semiconductor (CMOS) process. The cell membrane potential sensor comprises a metal-oxide-semiconductor (MOS) field-effect tube consisting of a field-effect tube drain region and a field-effect tube source region, the MOS field-effect tube is connected with an oxidation layer, a multi-layer metal grid structure is covered on the oxidation layer and sequentially comprises a connecting layer, a first metal layer, a through hole layer and a second metal layer from bottom to top, and an exposed microelectrode for living cell culture is arranged on the second metal layer. The invention provides the cell membrane potential sensor based on the standard CMOS process, the cell membrane potential sensor realizes the compatibility with the standard CMOS process, and the integration is convenient.

Description

technical field [0001] The invention relates to the design of a cell membrane potential sensing chip realized by using a standard CMOS process, and is suitable for future miniaturized, integrated and intelligent new biosensing systems, medicine and other fields. Background technique [0002] Taking living cells as the research object, analyzing the behavior of the membrane potential of the cell under external light, electricity or drug stimulation can be used to detect and analyze the physiological characteristics of the cell, and can replace the traditional toxicological analysis and drug screening with animals as the experimental object . The study of cell membrane potential will broaden the current research field of biomedical measurement and control to a large extent. [0003] The patch clamp technology developed in the early 1980s is a method of intracellular measurement by clamping the voltage on the small area of ​​the cell membrane in contact with the electrode, whi...

Claims

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Application Information

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IPC IPC(8): G01N27/414
Inventor 施朝霞
Owner ZHEJIANG UNIV OF TECH
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