Dangling syntony photon device and preparation method thereof based on silicon substrate nitride
A technology of photonic devices and nitrides, applied in piezoelectric devices/electrostrictive devices, processes for producing decorative surface effects, piezoelectric/electrostrictive/magnetostrictive devices, etc., can solve difficult-to-process, nitrogen Problems such as immature compound processing technology and restrictions on the development of nitride photonics and optical micro-electromechanical devices have achieved the effect of facilitating the integration of photonic devices
Inactive Publication Date: 2012-07-04
NANJING UNIV OF POSTS & TELECOMM
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However, SiC and sapphire substrates are not easy to process, and the processing technology of nitrides, especially GaN, is not mature, which limits the development of nitride photonics and optical micro-electromechanical devices.
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[0030] Below in conjunction with accompanying drawing, the technical scheme of the present invention is described in further detail:
[0031] like figure 1 As shown, the present invention designs a suspended resonant photonic device based on silicon substrate nitride, and realizes that the carrier is a silicon substrate III nitride wafer, including a silicon substrate layer, and a top layer nitride device disposed on the silicon substrate layer. layer, where:
[0032] The silicon substrate layer is a concave structure, and the upper opening is a cuboid cavity;
[0033] The suspended part of the top nitride device layer located on the upper part of the cuboid cavity has a nanophotonic device structure.
[0034] As an optimized structure of the present invention: the nanophotonic device structure is a circular grating structure or a two-dimensional photonic crystal structure;
[0035] Figure 4 Shown is a SEM photograph of a silicon substrate suspended nitride circular raste...
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The invention discloses a suspending syntony photon device and a preparation method thereof based on silicon substrate nitride. A silicon substrate III- nitride wafer is adopted to realize a carrier, the suspending syntony photon device comprises a silicon substrate layer and a top layer nitride device layer arranged on the silicon substrate layer, wherein the silicon substrate layer is of a concave structure, and an upper part opening is a cuboid cavity; the top layer nitride device layer is positioned on a suspending part of the upper part of the cavity which is provided with a nanometer photon device structure; and the invention also discloses the preparation method of the suspending syntony photon device based on the silicon substrate nitride. The suspending syntony photon device based on the silicon substrate nitride designed by the invention is capable of having stronger limitation reservation on a light field; and the preparation method of the suspending syntony photon device based on the silicon substrate nitride designed by the invention can realize interaction of light wave and the a suspending photon device, and the method can realize the compatibility with a silicon process technology, thereby conveniently realizing an integration photon device.
Description
technical field [0001] The invention provides a suspended resonance photonic device based on silicon substrate nitride and a preparation method thereof, belonging to the field of information materials and devices. Background technique [0002] From a material point of view, nitride materials, especially GaN materials, have a high refractive index (~2.5) and are transparent in the visible and near-infrared bands, making them an excellent optical material. However, since SiC and sapphire substrates are not easy to process, and the processing technology of nitrides, especially GaN, is not mature, the development of nitride photonics and optical MEMS devices is limited. In recent years, by introducing AlN / AlGaN or other unique buffer layers to compensate for the residual stress caused by lattice mismatch and inconsistent thermal expansion, high-quality nitride materials based on silicon substrates have become increasingly mature and have gradually entered the market. Nitronex i...
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Login to View More IPC IPC(8): B81B3/00B81C1/00
Inventor 王永进朱洪波
Owner NANJING UNIV OF POSTS & TELECOMM