Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Manufacture method of dielectric substrate and metamaterial

A dielectric substrate and gel technology, applied in the field of metamaterials, can solve the problems of non-uniform distribution of the dielectric constant of the dielectric substrate, the dielectric substrate does not have the electromagnetic modulation function, etc., and achieve the effect of flexible design and extended function application

Active Publication Date: 2012-07-04
KUANG CHI INST OF ADVANCED TECH +1
View PDF4 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The existing artificial microstructures of metamaterials are generally made of metal materials, while the dielectric substrates generally use organic resin substrates. The dielectric constant of the dielectric substrates is uniformly distributed, and the dielectric substrate itself does not have electromagnetic modulation functions. For the needs of metamaterial functional design, How to design the dielectric constant of the dielectric substrate to have a non-uniform distribution has become a technical problem to be solved urgently in the prior art

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Manufacture method of dielectric substrate and metamaterial
  • Manufacture method of dielectric substrate and metamaterial
  • Manufacture method of dielectric substrate and metamaterial

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] A method for preparing a dielectric substrate, comprising the following steps:

[0032] a. Using ethyl orthosilicate as the silicon source, take 104 grams of ethyl orthosilicate, 31.5 grams of water, and 92-460 grams of ethanol and mix evenly. The molar ratio is equivalent to ethyl orthosilicate: water: ethanol is 1: 3.5 : 4-20, obtain silica sol;

[0033] b. Pour the above-mentioned silica sol into a mold. The shape of the mold can be arbitrarily designed according to the application requirements of the dielectric substrate. In this embodiment, a flat plate is used, and ammonia water with a concentration of 0.35mol / L is added dropwise to adjust the pH value. To 2.5-3.5, stand still, make the silica sol age and form a gel;

[0034] c. Use ethanol or acetone as a replacement agent to replace the water in the gel, and obtain a gel block after demoulding;

[0035] d. The above-mentioned gel block is heated non-uniformly with a single thermal radiation infrared lamp. In t...

Embodiment 2

[0038] A method for preparing a dielectric substrate, comprising the following steps:

[0039] a. Methyl orthosilicate: water: ethanol: HCl according to 1: 3.5: 8: 8.4 × 10 -4 The molar ratio is mixed to obtain a mixed solution. In order to increase the porosity, formamide and ethylene glycol can be added as a drying control agent, and a constant temperature water bath is kept at 60°C for 2 hours to obtain a silica sol;

[0040] b. Place a layer of organic fiber cloth on the bottom of a mould. The shape of the mold can be arbitrarily designed according to the application requirements of the dielectric substrate. Drop in hydrochloric acid with a mass fraction of 1.5%, adjust the pH value to 11-12, and let it stand to age the silica sol to form a gel;

[0041] c. Using ethanol or acetone as a displacing agent, remove the water in the gel, use the surface modifier trimethylchlorosilane to hydrophobically treat the gel, and obtain a gel block after demoulding;

[0042] d. The ab...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
sizeaaaaaaaaaa
densityaaaaaaaaaa
porosityaaaaaaaaaa
Login to View More

Abstract

The invention provides a manufacture method of a dielectric substrate and a metamaterial using the dielectric substrate. By means of the manufacture method of the dielectric substrate, in the manufacturing method of silica aerogel, a single thermal-radiating infrared lamp is used for heating gel blocks, and the gel blocks are dried in a heating method, so that dielectric constants of the manufactured dielectric substrate have the continuously-changing distribution rule. Through the theory, the manufacture method of the dielectric substrate and the memamaterial provides more flexible design ways for functional design of the memamaterial can be provided, and functional application of the memamaterial is greatly expanded.

Description

【Technical field】 [0001] The invention relates to the field of metamaterials, in particular to the preparation technology of metamaterial dielectric substrate materials. 【Background technique】 [0002] Metamaterials refer to some artificial composite structures or composite materials with extraordinary physical properties that natural materials do not have. Through the orderly design of the structure on the key physical scale of the material, the limitation of some apparent natural laws can be broken through, so as to obtain the supernormal material function beyond the ordinary nature inherent in nature. The properties and functions of metamaterials mainly come from their internal structures rather than the materials that make them up, so a lot of research work has been done to design and synthesize metamaterials. In 2000, Smith et al. of the University of California pointed out that the composite structure of periodically arranged metal wires and split-ring resonators (SRR...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C04B28/24
Inventor 刘若鹏赵治亚缪锡根周添李雪金曦
Owner KUANG CHI INST OF ADVANCED TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products