Semiconductor equipment

Abstract

The invention discloses semiconductor equipment, which comprises a reaction chamber, an adsorption component and a radio frequency device for providing radio frequency power for the inside of the reaction chamber, wherein the adsorption component is positioned in the reaction chamber, and arranged on the top of the reaction chamber, and used for adsorbing chips; the bottom of the reaction chamber is provided with an air inlet which is a channel for introducing process gas into the reaction chamber. The chips are adsorbed on the adsorption component on the top of the reaction chamber, and the coating process treatment surfaces of the chips face downwards, so that particles generated in the coating process treatment process or particles peeled from an upper polar plate after long-term operation are prevented from falling onto the surfaces of the chips, the quality of the chips is improved and the influence on the appearances of the chips is avoided.

Description

Technical field [0001] The present invention relates to the field of microelectronics technology, in particular to a semiconductor device. Background technique [0002] With the continuous development of plasma (Plasma) technology, plasma equipment has been widely used in the manufacturing process of manufacturing integrated circuit (IC) or photovoltaic (PV) products. Parallel-plate capacitively coupled plasma (CCP) equipment due to its simple discharge principle, and the plasma and inductively coupled plasma (ECR) equipment generated by the electron cyclotron resonance plasma (Electron Cyclotron Resonance Plasma, hereinafter referred to as ECR) equipment. Inductively Coupled Plasma (hereinafter referred to as: ICP) generates relatively uniform plasma, so it has been widely used in the photovoltaic product manufacturing industry. At present, a flat-plate plasma enhanced chemical vapor deposition (Plasma Enhanced Chemical Vapor Deposition, hereinafter referred to as PECVD) equipm...

AI Technical Summary

Problems solved by technology

[0005] Since the flat-plate PECVD equipment adopts the upper coating method when coating the wafer, that is, the coating surface of the wafer faces upward, so the particles generated during the process or the particles peeled off from the upper plate after long-term operation will fall off. Falling onto the coated surface of the wafer, thereby degrading the quality of the wafer and affecting the appearance of the wafer

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