Omnibearing growing method for KDP (Potassium Dihydrogen Phosphate) crystals

Abstract

The invention belongs to the technical field of crystal growth and relates to an omnibearing growing method for KDP (Potassium Dihydrogen Phosphate) crystals. The method comprises the following steps of: adding redistilled water into a pure ADP (Ammonium Dihydrogen Phosphate) raw material to prepare a solution with the saturation temperature of 40-50 DEG C, and regulating the pH value of the solution to be 2.4; filtering the solution by respectively using filter paper and a filter membrane to obtain a pure and clean solution; carrying out constant-temperature overheating on the pure and clean solution at a temperature being 20 DEG C higher than the saturation temperature, so as to obtain a growth solution; cutting seed crystals along the frequency-doubling direction of the crystals and forming through holes in the seed crystals; penetrating through the through holes by using a fishing thread and fixing the seed crystals at the center of a seed crystal rack; recovering ideal contours of the crystals by enabling the seed crystals to form cones along a Z axis during the process of cooling the solution; immerging the seed crystals into the growth solution in a fully-open manner during the process of crystal growth so as to enable the seed crystals to form finished crystals through the free growth in all directions; and cutting the finished crystals along the direction of the fishing thread by using a slicer so as to obtain thin slices, i.e. finished frequency-doubled crystals. The omnibearing growing method for the KDP crystals has the advantages of simplicity in process and easiness in the control of a growing process, the quality of the grown crystals is good, the application effect of the grown crystals is excellent, so that the products in the prior art can be replaced by the grown crystals.

Description

Technical field: [0001] The invention belongs to the technical field of crystal growth, and relates to a method for omni-directional growth of KDP-like crystals, which is suitable for the omni-directional growth of water-soluble crystals with a medium diameter (about 10 cm), especially a method capable of realizing the omni-directional growth of KDP-like crystals by solution method New process technology to increase the growth rate of crystals, increase the stability of crystal growth, and realize the high-quality and rapid growth of KDP crystals. Background technique: [0002] At present, with the application of high-power laser systems in major technologies such as controlled thermonuclear reactions and nuclear explosion simulations, the research on KDP-like crystals with high laser damage thresholds and their properties has entered a new stage in the world. Due to the large size of KDP crystals required in practical applications, it is required to further increase the gro...

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Problems solved by technology

[0003] The purpose of the present invention is to overcome the defects of slow crystal growth rate and poor crystal quality in the existing crystal growth and preparation technology, seek to design and provide a new process method for fast and efficient crystal growth in all directions, and realize high-quality and fast KDP-like crystals. grow, and increase crystal utilization

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