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Omnibearing growing method for KDP (Potassium Dihydrogen Phosphate) crystals

A growth method and crystal growth technology, applied in the direction of crystal growth, single crystal growth, single crystal growth, etc., can solve the problems of poor crystal quality and slow crystal growth speed, and achieve good crystal structure and quality, simple growth process, and growth The effect of easy control of the process

Inactive Publication Date: 2012-07-04
QINGDAO UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The purpose of the present invention is to overcome the defects of slow crystal growth rate and poor crystal quality in the existing crystal growth and preparation technology, seek to design and provide a new process method for fast and efficient crystal growth in all directions, and realize high-quality and fast KDP-like crystals. grow, and increase crystal utilization

Method used

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  • Omnibearing growing method for KDP (Potassium Dihydrogen Phosphate) crystals
  • Omnibearing growing method for KDP (Potassium Dihydrogen Phosphate) crystals
  • Omnibearing growing method for KDP (Potassium Dihydrogen Phosphate) crystals

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Embodiment

[0019] The specific steps of this embodiment include solution preparation, solution filtration, solution overheating, seed crystal treatment, seed crystal fixation, seed crystal cone forming, crystal growth and crystal cutting eight process steps, and the specific steps are:

[0020] (1) Solution preparation: according to the solubility formula s t =(171+4.7t / °C) g / kg calculation, weigh 1500g double distilled water and add 1000g superior grade pure ADP raw material to prepare a solution whose saturation point is 40-50°C, and adjust the pH value of the solution to 2.4 with phosphoric acid;

[0021] (2) Solution filtration: filter the solution with filter papers of 0.45 μm and 0.22 μm respectively to obtain a pure solution;

[0022] (3) Overheating of the solution: overheating the pure solution at a constant temperature of 20° C. above the saturation point for 24 hours to obtain a growth solution;

[0023] (4) Seed crystal treatment: cut the seed crystal into 8×8×2mm seed cryst...

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Abstract

The invention belongs to the technical field of crystal growth and relates to an omnibearing growing method for KDP (Potassium Dihydrogen Phosphate) crystals. The method comprises the following steps of: adding redistilled water into a pure ADP (Ammonium Dihydrogen Phosphate) raw material to prepare a solution with the saturation temperature of 40-50 DEG C, and regulating the pH value of the solution to be 2.4; filtering the solution by respectively using filter paper and a filter membrane to obtain a pure and clean solution; carrying out constant-temperature overheating on the pure and clean solution at a temperature being 20 DEG C higher than the saturation temperature, so as to obtain a growth solution; cutting seed crystals along the frequency-doubling direction of the crystals and forming through holes in the seed crystals; penetrating through the through holes by using a fishing thread and fixing the seed crystals at the center of a seed crystal rack; recovering ideal contours of the crystals by enabling the seed crystals to form cones along a Z axis during the process of cooling the solution; immerging the seed crystals into the growth solution in a fully-open manner during the process of crystal growth so as to enable the seed crystals to form finished crystals through the free growth in all directions; and cutting the finished crystals along the direction of the fishing thread by using a slicer so as to obtain thin slices, i.e. finished frequency-doubled crystals. The omnibearing growing method for the KDP crystals has the advantages of simplicity in process and easiness in the control of a growing process, the quality of the grown crystals is good, the application effect of the grown crystals is excellent, so that the products in the prior art can be replaced by the grown crystals.

Description

Technical field: [0001] The invention belongs to the technical field of crystal growth, and relates to a method for omni-directional growth of KDP-like crystals, which is suitable for the omni-directional growth of water-soluble crystals with a medium diameter (about 10 cm), especially a method capable of realizing the omni-directional growth of KDP-like crystals by solution method New process technology to increase the growth rate of crystals, increase the stability of crystal growth, and realize the high-quality and rapid growth of KDP crystals. Background technique: [0002] At present, with the application of high-power laser systems in major technologies such as controlled thermonuclear reactions and nuclear explosion simulations, the research on KDP-like crystals with high laser damage thresholds and their properties has entered a new stage in the world. Due to the large size of KDP crystals required in practical applications, it is required to further increase the gro...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/14C30B7/08
Inventor 滕冰钟德高马江涛
Owner QINGDAO UNIV
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