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Method for manufacturing microwave hybrid integrated circuit based on Ansoft HFSS (High Frequency Structure Simulator)

A hybrid integrated circuit and microwave technology, applied in the fields of electrical digital data processing, instruments, computing, etc., can solve the problem of no longer being used, achieve a good guiding role, and reduce the effect of reducing circuit performance.

Active Publication Date: 2013-10-30
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Abstract
  • Description
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Problems solved by technology

The reason is that the characteristics of the actual RF system can no longer use the terminal open circuit and short circuit measurement method often used in low frequency applications

Method used

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  • Method for manufacturing microwave hybrid integrated circuit based on Ansoft HFSS (High Frequency Structure Simulator)
  • Method for manufacturing microwave hybrid integrated circuit based on Ansoft HFSS (High Frequency Structure Simulator)
  • Method for manufacturing microwave hybrid integrated circuit based on Ansoft HFSS (High Frequency Structure Simulator)

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Embodiment Construction

[0052] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0053]The method for preparing a microwave hybrid integrated circuit based on Ansoft HFSS provided by the present invention, the microwave hybrid integrated circuit is a microwave amplifying circuit composed of an input matching network, a transistor and an output matching network sequentially cascaded, the method comprising:

[0054] Step 1: Determine the source and drain impedances. Based on the provided active devices, use Agilent's Advanced Design System to perform loadpull simulation. According to the simulation results, the optimal load impedance and its corresponding source impedance can be obtained; or the corresponding source and drain impedance can be obtained from the loadpull test.

[0055] Step 2: Design the ...

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Abstract

The invention discloses a method for manufacturing a microwave hybrid integrated circuit based on an Ansoft HFSS (High Frequency Structure Simulator). The method comprises the steps of: determining a source impedance and a leakage impedance: designing a prototype circuit of an input and output matching network; carrying out segmented optimization design by using the Ansoft HFSS; designing a prototype circuit of a stabilizing network; carrying out optimization design on an input part circuit; exporting simulation data of the output network and the input circuit to an ADS (Advanced Design System), electrically connecting with an active device, judging whether the circuit reaches the expected requirements including gain and stability, if yes, completing the design; and if not, carrying out fine control optimization on the circuit until reaching the requirement. On the premise of meeting full-frequency band stabilizing requirement, the invention realizes working frequency, gain and output power specified by the micro hybrid integrated circuit, and ensures that the microwave hybrid integrated circuit has better maneuverability.

Description

technical field [0001] The invention relates to the technical field of integrated circuit design, in particular to a method for preparing a microwave hybrid integrated circuit based on Ansoft HFSS. Background technique [0002] Microwave circuits began as three-dimensional microwave circuits applied in the 1940s, consisting of waveguide transmission lines, waveguide components, resonant cavities, and microwave electron tubes. With the development of microwave solid-state devices and the emergence of distributed transmission lines, planar microwave circuits appeared in the early 1960s. Planar microwave circuits consist of microstrip components, lumped components, microwave solid-state devices, etc. These passive microwave devices and active microwave components are fabricated on a microwave hybrid circuit on a semiconductor substrate. The characteristic of the planar microwave circuit is that it is designed and manufactured according to the requirements of the microwave mach...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G06F17/50
Inventor 戈勤陈晓娟刘新宇
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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