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Semiconductor field effect structure and preparation method and application thereof

A field effect, semiconductor technology, applied in the field of semiconductor field effect structure, to achieve the effect of a significant magnetic field

Active Publication Date: 2014-02-05
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The growth of divalent cation-doped hole-type perovskite manganese oxides on PMN-PT has been reported, but the study of tetravalent cation-doped electron-type perovskite manganese oxides grown on PMN-PT It has not been reported that tetravalent cation-doped perovskite manganese oxides exhibit similar magnetic and magnetoelectric transport characteristics compared to divalent cation-doped hole-type perovskite manganese oxides, but due to their conductive The nature is n-type, which has richer physical connotations and practical uses, such as the possibility of combining with p-type semiconductors to form a functional heterojunction with rectifying behavior, so it has attracted widespread attention

Method used

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  • Semiconductor field effect structure and preparation method and application thereof
  • Semiconductor field effect structure and preparation method and application thereof
  • Semiconductor field effect structure and preparation method and application thereof

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Experimental program
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Embodiment

[0054] Embodiment (001)-0.7Pb(Mg 1 / 3 Nb 2 / 3 )O 3 -0.3PbTiO 3 (PMN-PT) / La 0.7 Ce 0.3 MnO 3 Fabrication of Field Effect Structures

[0055] La prepared by chemical formula 0.7 Ce 0.3 MnO 3 Perovskite manganese oxide, the specific steps are as follows:

[0056] 1) Press La 0.7 Ce 0.3 MnO 3 Chemical formula ingredient, raw material is La 2 o 3 , CeO 2 , MnCO 3 (MnCO 3 Decomposes during calcination, C forms CO 2 followed by airflow). After the proportioned raw materials are fully ground and mixed, they are calcined at 900 degrees Celsius for 24 hours. After taking it out, it was ground and calcined three times under the same conditions, and then sintered at 1300 degrees Celsius for 48 hours to prepare a La with a diameter of 40 mm and a thickness of 5 mm. 0.7 Ce 0.3 MnO 3 target.

[0057] 2) Purchase (001)-oriented 0.7Pb (Mg 1 / 3 Nb 2 / 3 )O 3 -0.3PbTiO 3 (PMN-PT) single crystal substrate (thickness 0.1mm). Before deposition, the PMN-PT substrate was ultras...

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Abstract

The invention discloses a semiconductor field effect structure and a preparation method and application thereof. In the semiconductor field effect structure, a relaxation ferroelectric single-crystal substrate PMN-PT is used as a grid electrode and quadrivalent cation doped perovskite manganese oxide formed on the single-crystal substrate is used as a channel. Due to the relaxation ferroelectric single-crystal substrate PMN-PT having evident inverse piezoelectric effect, the channel resistance generated on the relaxation ferroelectric single-crystal substrate PMN-PT can be changed evidently by combination action of polarization induced by an electric field and strain effect, and accordingly a novel functional field effect structure having evident magnetic field and adjustable electric-field property is obtained. Meanwhile, the quadrivalent cation doped perovskite manganese oxide has n-type conductive property and the energy band structure is different from the P type, so that the field effect structure utilizing the quadrivalent cation doped perovskite manganese oxide as the channel has brand-new advantages of field effect.

Description

technical field [0001] The invention relates to a semiconductor field comprising a relaxation type ferroelectric single crystal substrate (PMN-PT) as a gate and a perovskite manganese oxide (such as LaCeMnO, LaSnMnO, LaHfMnO) doped with tetravalent cations as a channel Effect structure, its preparation method and use. Background technique [0002] Perovskite manganese oxide has become an international research hotspot in recent years due to its colossal electroresistance (CMR) effect. Due to the strong coupling between spin, charge and orbital degrees of freedom, it shows rich physical connotations and interesting physical phenomenon. More and more facts show that the potential advantage of perovskite manganese oxide lies in the preparation of magnetoelectronic devices. In addition to the extraordinary magnetoresistance effect, perovskite oxides also exhibit rich physical properties such as giant electric field resistance, ferroelectricity, dielectricity, and superconducti...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/78H01L29/06H01L29/12H01L29/43H01L21/336H01L21/28C04B35/495C23C14/28C23C14/08
Inventor 胡凤霞王晶陈岭沈保根孙继荣
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
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