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LED outputting narrow-band notch filtering light and preparation method thereof

A technology of light-emitting diodes and notch waves, which is applied in the direction of diffraction gratings, electrical components, circuits, etc., to achieve the effects of protecting the metal film layer, increasing the effect of resonance filtering, and facilitating adjustment

Active Publication Date: 2012-07-04
苏州东辉光学有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, so far, the idea of ​​designing the structure of the LED chip itself in order to achieve a highly integrated and efficient active filter device has not been reported.

Method used

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  • LED outputting narrow-band notch filtering light and preparation method thereof
  • LED outputting narrow-band notch filtering light and preparation method thereof
  • LED outputting narrow-band notch filtering light and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] see attached figure 1 , which is a schematic cross-sectional view of the structure of a subwavelength metal composite grating embedded light-emitting diode active narrow-band notch filter provided in this embodiment. The structure of preparing a multilayer waveguide-type active notch filter light-emitting diode chip on the surface of a III-V GaN-based LED is as follows: an LED light-emitting working region is grown on a substrate material 1, including an n-type GaN region 2, p p-type GaN region 4 and InGaN / GaN quantum well 3; there is an insulating dielectric film 5 on the p-type GaN region in sequence, and the insulating medium is SiO 2 Or SiN; p-type layer transparent electrode 6; p-type layer metal electrode 7 and n-type layer metal electrode 8; dielectric transition layer 9 and dielectric protective layer 11, the dielectric layer is the same or different materials, can be SiO 2 , Al 2 O 3 , MgF 2 , ZnS, ZnO, BK7 glass and other transparent optical thin film mate...

Embodiment 2

[0042] In this embodiment, a multilayer waveguide-type trapped light-emitting light-emitting diode chip with different periods of the composite grating is prepared.

[0043] According to different central wavelengths of the filtered light, using the technical solution of Embodiment 1, the thickness of the dielectric transition layer of the diode chip is 160 nm, the thickness of the composite grating is 210 nm, the duty cycle is 0.5, the thickness of the dielectric protective layer is 10 nm, and the period of the composite grating is 10 nm. 232 nm, 234 nm, 236 nm, 238 nm, 240 nm, 242 nm, 244 nm, 246 nm, 248 nm and 250 nm, respectively.

[0044] see attached image 3 , which is a graph showing the change of the notch spectral peak value of the light-emitting diode chip provided in this embodiment with the change of the composite grating period in the light-emitting wavelength range of about 30 nanometers. Depend on image 3 It can be seen that the grating period changes by 18 ...

Embodiment 3

[0046] According to different bandwidths, using the technical solution of Embodiment 1, the multilayer waveguide-type trapped light-emitting diode chip provided in this embodiment has a thickness of the dielectric transition layer of 160 nm, a thickness of a composite grating of 210 nm, a period of 240 nm, and a thickness of the dielectric protective layer of 10 nm. The corresponding composite grating duty cycles are 0.35, 0.45 and 0.55, respectively.

[0047] see attached Figure 4 , which is a transmittance curve graph showing different filter bandwidths in the notch narrow-band spectrum of the light-emitting diode chip provided in this embodiment in the light-emitting band of 430nm-450nm under the condition of different duty ratios of the composite grating. Depend on Figure 4 It can be seen that the thickness of the dielectric transition layer of the multilayer waveguide-type trapped light-emitting diode chip provided in this embodiment is 160 nm, the thickness of the com...

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Abstract

The invention discloses an LED outputting narrow-band notch filtering light, and a preparation method thereof. According to the invention, a multi-layer waveguide structural layer is composited on the light-emitting surface of an LED chip and comprises a medium depletion layer, a composite grating layer and a medium protective layer; the composite grating layer is a metal / medium grating film layer which is formed by metal strips and medium strips at intervals; the medium depletion layer is positioned below the composite grating layer and is in direct contact with the light-emitting surface of the LED chip; the medium protective layer is above the composite grating layer and is in direct contact with the ambient environment or transparency electrode; and the thickness of each layer of the multi-layer waveguide structure layer, the grating duty cycle and the period parameter are designed to meet the condition of the resonance of the light waveguide mold transmission. According to the invention, a sub-wavelength metal / medium composite grating structure is directly integrated on the surface of the LED chip, and the LED per se has filtering effect; and compared with a traditional passive filter, the LED is a highly integrated active filtering light-emitting device.

Description

technical field [0001] The invention relates to a light emitting diode (LED) light source with a semiconductor band gap structure to generate light, in particular to an electromagnetic wave transmission structure, a narrow-band filtering light source with an embedded subwavelength composite grating structure, and belongs to the field of micro-nano optical devices. Background technique [0002] With the rapid development of nanolithography technology and the urgent need for the miniaturization of optical components and the integration of optical systems, the research, design and preparation of micro-nano optical devices have become a hot spot of widespread concern in academia and industry. Micro-nano optical components are constantly emerging. The main function of the optical filter is to filter the light source of a specific wavelength in the working band and cut off the incident light of other wavelengths. The main structure of the traditional optical filter is to evap...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00G02B5/18
Inventor 张桂菊曹冰王钦华
Owner 苏州东辉光学有限公司
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