Reconfigurable threshold logic unit based on SET (Single Electron Transistor)/MOS (Metal Oxide Semiconductor) composite structure

A technology of threshold logic and hybrid structure, applied in logic circuits, electrical components, pulse technology, etc., can solve problems such as strong field effects and short channel effects

Active Publication Date: 2012-07-04
FUZHOU UNIVERSITY
View PDF1 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

There are many problems in the electrical characteristics and reliability of CMOS devices, such as short channel effects, strong field effects, and drain-induced barrier drop effects, etc.
At t

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Reconfigurable threshold logic unit based on SET (Single Electron Transistor)/MOS (Metal Oxide Semiconductor) composite structure
  • Reconfigurable threshold logic unit based on SET (Single Electron Transistor)/MOS (Metal Oxide Semiconductor) composite structure
  • Reconfigurable threshold logic unit based on SET (Single Electron Transistor)/MOS (Metal Oxide Semiconductor) composite structure

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0024] The present invention will be further described below in conjunction with the drawings and embodiments.

[0025] Such as figure 2 As shown, this embodiment provides a reconfigurable threshold logic unit based on a SET / MOS hybrid structure, which is characterized in that it is composed of a four-input SET / MOS hybrid circuit and first and second inverters. The output terminals of the first and second inverters are respectively connected to an input terminal of the SET / MOS hybrid circuit. The main principle of the threshold logic of the SET / MOS hybrid circuit is to calculate the total input value according to the weight of the input, and compare the total input value with the threshold value to obtain the output logic. If the total input value is greater than or equal to the threshold, the output is 1, otherwise it is 0. The logic equation to be satisfied by the threshold logic is shown in equation (1), where W i For input X i Corresponding weight, n Is the number of inputs...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to the technical field of integrated circuits, in particular to a reconfigurable threshold logic unit based on an SET (Single Electron Transistor)/MOS (Metal Oxide Semiconductor) composite structure and composed of nano devices. The reconfigurable threshold logic unit comprises a four-input SET/MOS composite circuit, a first phase inverter and a second phase inverter, wherein the output ends of the first phase inverter and the second phase inverter are respectively connected with an input end of the SET/MOS composite circuit; the input end is offset, but the device parameters of the circuit are not changed, thus, the logic unit can realize OR, NOR, AND and NAND logic functions. The reconfigurable threshold logic unit is simple in structure, low in power consumption, high in integration level, higher in reconfigurability and capable of effectively realizing different logic functions of the same unit. Due to the existence of the characteristics, the reconfigurable threshold logic unit can be applied to super-large-scale integrated circuits such as an FPGA (Field Programmable Gate Array), an artificial neural network and the like with low power consumption and high integration level.

Description

technical field [0001] The invention relates to the technical field of integrated circuits, in particular to a reconfigurable threshold logic unit composed of nanometer devices and based on a SET / MOS hybrid structure. Background technique [0002] In the past few decades, CMOS technology has occupied a dominant position in microelectronics technology, and Boolean logic can effectively use the characteristics of CMOS devices to realize the design of logic functions. CMOS devices provide a good circuit basis for Boolean logic than other logic. Compared with other logic forms, Boolean logic is easy to implement logic functions in hardware, and it matches well with CMOS devices. Therefore, most digital circuits designed based on CMOS devices are designed based on Boolean logic. [0003] However, with the increasing integration of integrated circuits, the continuous shrinking of feature process dimensions, and the simultaneous increase in performance and power consumption, tra...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H03K19/094
Inventor 魏榕山陈锦锋陈寿昌何明华
Owner FUZHOU UNIVERSITY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products