Super junction trench power MOSFET devices

Abstract

In a super junction trench power MOSFET (metal oxide semiconductor field effect transistor) device, a column of p-type dopant in the super junction is separated from a first column of n-type dopant by a first column of oxide and from a second column of n-type dopant by a second column of oxide. In an n-channel device, a gate element for the FET is advantageously situated over the column of p-type dopant; and in a p-channel device, a gate element for the FET is advantageously situated over the column of n-type dopant.

Description

[0001] related application [0002] A related co-pending application for this application is U.S. Patent Application No. 12 / 549,190 filed August 27, 2009 by Gao et al., entitled "Super Junction Trench Power MOSFET Devices Fabrication," and assigned To the assignee of this application. technical field [0003] Embodiments according to the present invention generally relate to semiconductor devices. Background technique [0004] In order to save energy, it is especially important to reduce power losses in transistors used, for example, in direct current (DC) to direct current converters. In Metal Oxide Semiconductor Field Effect Transistor (MOSFET) devices, especially in a class of MOSFETs known as power MOSFETs, power loss can be reduced by reducing the on-resistance (Rdson) of the device. [0005] The breakdown voltage indicates the ability of the device to withstand breakdown under reverse voltage conditions. Since the breakdown voltage is inversely proportional to Rdson...

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Problems solved by technology

Since the breakdown voltage is inversely proportional to Rdson, there is an adverse effect when Rdson decreases

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