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Electroplating device

An electroplating device and electroplating pool technology, which is applied in the direction of circuits, electrolytic components, electrolytic processes, etc., can solve the problems of high resistance deviation, thick electroplating layer deposition thickness, particle residue, etc., to ensure uniformity and reduce deposition thickness difference , the effect of improving the quality

Active Publication Date: 2012-07-11
NANTONG FUJITSU MICROELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the higher the Fe density near the contact pin 25a, the higher the current density, and the thicker the electroplating layer deposition thickness in the surrounding area of ​​the semiconductor wafer 2, which in turn induces peeling and particle residue in subsequent processes.
The uneven thickness of the conductive layer on the semiconductor wafer also tends to further deteriorate the process and make the resistance deviation higher
[0007] Similarly, in other electroplating devices of the prior art, there is also the defect that the electroplating layer deposition thickness in the central area of ​​the semiconductor wafer is thin, and the electroplating layer deposition thickness in the surrounding area is thick.
Especially when the size of the semiconductor wafer is larger than 8 inches, the above defects are more obvious

Method used

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Examples

Experimental program
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Effect test

Embodiment 1

[0044] refer to image 3 As shown, the present embodiment provides a kind of electroplating device, comprising:

[0045] Electroless plating baths, including electroplating baths 110;

[0046] an anode 120, arranged in the electroplating pool 110;

[0047]The substrate fixing device 130 is used to fix the semiconductor wafer 140, the surface of the semiconductor wafer 140 to be electroplated is arranged opposite to the anode 120, and the distance between the anode 120 and the semiconductor wafer 140 is along the direction of the middle area. The edge area increases sequentially;

[0048] The power supply 150 is used to provide a negative output and a positive output, the negative output is connected to the semiconductor wafer 140 , and the positive output is connected to the anode 120 .

[0049] The anode 120 can be vertically arranged in the electroplating tank 110, so that the electroplating process can be completed through the horizontal movement of the electroplating so...

Embodiment 2

[0061] Compared with Example 1, in conjunction with reference Figure 6 As shown, in this embodiment, a baffle plate 220 may also be provided at the edge region of the anode 120 , and the rest are the same as in Embodiment 1, and will not be repeated here. The material of the baffle 220 can be any kind of insulating material, so that the baffle 220 can reduce the electric force line between the anode 120 and the edge region of the semiconductor wafer 140 . At this time, the bending angle of the anode 120 may be reduced.

[0062] The baffle plate 220 in this embodiment is a cuboid, which can be fixed by hanging. It should be noted that, in other embodiments of the present invention, the baffle plate 220 may also be a curved arc-shaped structure, and it may also be fixed by pasting on the anode 120 or by other methods.

[0063] In this embodiment, during the electroplating process, not only the distance between the anode 120 and the semiconductor wafer 140 is increased sequent...

Embodiment 3

[0065] Compared with Example 1, in conjunction with reference Figure 7 As shown, in this embodiment, under the premise of keeping the anode 120 curved, the anode 120 can be a multi-layer concentric circular structure. At this time, the power supply 150 needs to provide multiple different positive outputs, and each ring is connected to Different positive output. Preferably, the positive voltage corresponding to the positive output decreases sequentially from the center of the concentric circle structure outward. At this time, the bending angle of the anode 120 may be reduced.

[0066] As a concrete example, combined with reference Figure 7 As shown, the anode 120 includes three concentric circles 121, 122 and 123, each of which is connected to a different positive output of the power supply 150, the positive voltage received by the concentric circle 121 is V1, and the positive voltage received by the concentric circle 122 is V1. The voltage is V2, and the positive voltage ...

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PUM

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Abstract

The invention discloses an electroplating device. The electroplating device comprises a chemical electroplating groove, an anode, a substrate fixing device and a power supply device, wherein the chemical electroplating groove comprises an electroplating pond; the anode is arranged in the electroplating pond; the substrate fixing device is used for fixing a semiconductor wafer; the surface to be electroplated on the semiconductor wafer and the anode are arranged oppositely; the distance between the anode and the semiconductor wafer is sequentially increased towards an edge region along a middle region; the power supply device is used for providing a negative output and a positive output; the negative output is connected with the semiconductor wafer; and the positive output is connected with the anode. According to the electroplating device, uniform metal layers or films can be formed in a central region or a surrounding region of the semiconductor wafer, so that the electroplating quality is improved finally.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an electroplating device. Background technique [0002] In the manufacture of integrated circuit (IC) semiconductor devices, the evenness of the substrate surface is critical, especially as the density of components increases and the size shrinks to the sub-micron level. Generally, the metal layer is used as the connection of individual components in the IC, and the metal line is separated by a dielectric layer or an insulating layer, and interconnection structures such as trenches, contact holes, and contacts are formed between the dielectric layers to provide conductive metal layers. circuit channel. [0003] The interconnection structure in the prior art uses copper or copper alloy as the main material, and the following methods can be used to deposit a metal layer or film of copper or copper alloy: physical vapor deposition (PVD) method, chemical vapor deposition (CVD...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C25D7/12C25D21/12C25D17/00
Inventor 丁万春
Owner NANTONG FUJITSU MICROELECTRONICS