Method and device for removing cut oxidation films of 8-inch wafers

A technology for oxide film removal and oxide film application in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., which can solve problems such as high cost of equipment and raw materials, impact on the quality of the epitaxial layer, inability to remove the oxide film by cutting, etc.

Active Publication Date: 2012-07-11
GRINM SEMICONDUCTOR MATERIALS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The ensuing question is: the growth of SiO on the back of the silicon wafer 2 At the same time as the thin film, SiO is also grown on the edge of the silicon wafer. 2 thin film, while this layer of SiO at the edge 2 thin film, which will have a great impact on the quality of the epitaxial layer on the front side of the silicon wafer, so the edge oxide film must be removed
[0003] At present, the edge removal methods adopted in China mainly include film edge removal and roller edge removal. Film edge removal adopts the method of pasting PTFE blue film on the back of the silicon wafer to protect the oxide film on the back and remove the edge and incision oxide film. This process The cost of equipment and raw materials used is relatively high, and the production process is complex and difficult to operate
[0004] Roller defringing technology has been relatively perfect for back-sealing wafers below 6 inches. However, when the size of silicon wafers increases to 8 inches, the reference surface is replaced by incisions. The original roller defringing technology has encountered difficult problems. It is impossible to remove the kerf oxide film, so it is necessary to provide a new device for removing the kerf oxide film

Method used

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  • Method and device for removing cut oxidation films of 8-inch wafers
  • Method and device for removing cut oxidation films of 8-inch wafers
  • Method and device for removing cut oxidation films of 8-inch wafers

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Experimental program
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Effect test

Embodiment 1

[0024] see Figure 1-Figure 6 As shown in the figure, the method for removing the oxide film of the 8-inch wafer incision of the present invention includes the following steps: firstly, the device is turned on to exhaust air; Cover the tank with nitrogen protective cover; turn on the motor to drive the lift tank to move upward from the HF acid tank at a rate of 4-6mm / s; stop the movement until the corrosion block is in close contact with the incision, and the reaction time is 10-15s; start the motor, drive the The lift tank is returned to the HF acid tank at a speed of 4-6mm / s; the nitrogen protective cover is opened, the film cassette is taken out, and the removal of the oxide film of the incision is checked. A total of 100 pieces were processed, and the condition of the incision was checked, and the removal was about 0.6mm, which was uniform and could meet the processing requirements.

Embodiment 2

[0026] see Figure 1-Figure 6 As shown in the figure, the method for removing the oxide film of the 8-inch wafer incision of the present invention includes the following steps: firstly, the device is turned on to exhaust air; Cover the tank with nitrogen protective cover; turn on the motor to drive the lift tank to move upward from the HF acid tank at a rate of 6-10mm / s; stop the movement until the corrosion block is in close contact with the incision, and the reaction time is 15-30s; start the motor, drive the The lift tank returns to the HF acid tank at a speed of 6-10mm / s; open the nitrogen protective cover, take out the film box, and then cooperate with the edge oxide film removal device to remove the edge, process a total of 200 pieces, check the fit of the incision and the edge, and remove the edge The width is exactly the same as the incision, and it is uniform, which fully meets the requirements of IC processing.

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Abstract

The invention provides a method and device for removing cut oxidation films of 8-inch wafers. The method comprises the steps as follows: (1) silicon wafers are sorted by a sorting machine, cuts vertically face downwards; (2) wafer boxes are arranged on a positioning clamp groove, and are covered by a nitrogen protection cover; (3) a motor is started, and a screw drives a lifting tank to be lifted upwards from an HF acid liquor tank; (4) when an etching block is tightly contacted with each silicon wafer cut, HF acid reacts with the oxidation films; (5) a motor is started, and the lifting tank is driven to descend to the HF acid liquor tank; and (6) the nitrogen protection cover is opened, and the silicon wafers are taken out for checking. According to the method, the conical etching block is contacted with the cuts of the 8-inch wafers, so as to achieve the purpose of removing the oxidation films of the cuts. The device has the advantages of simple structure, convenience for operation, and low process cost.

Description

technical field [0001] The invention relates to a method and device for removing oxide film of 8-inch wafer incision Background technique [0002] With the rapid development of the domestic integrated circuit industry, the demand for silicon substrate materials is also increasing, and the quality requirements are becoming more and more stringent. It is usually necessary to carry out back sealing treatment on heavily doped silicon wafers, that is, grow a layer of SiO on the backside of the substrate wafer. 2 thin film due to impurities in SiO 2 The diffusion coefficient in silicon is much smaller than that in silicon, so impurities in the substrate can be effectively blocked. The ensuing problem is: growing SiO on the backside of the silicon wafer 2 At the same time as the film, SiO also grows on the edge of the silicon wafer 2 film, and this layer of SiO on the edge 2 The thin film will have a greater impact on the quality of the epitaxial layer on the front side of the...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02H01L21/00
Inventor 徐继平籍小兵刘斌边永智宁永铎孙洪波张静
Owner GRINM SEMICONDUCTOR MATERIALS CO LTD
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