Bidirectional triode thyristor based on diode auxiliary triggering

Abstract

The invention discloses a bidirectional triode thyristor based on diode auxiliary triggering, which comprises a P substrate layer and two diode links, wherein a first N well, a P well and a second N well are arranged on the P substrate layer; a first N plus active implantation area, a first P plus active implantation area and a second N plus active implantation area are arranged on the first N well; a third N plus active implantation area, a second P plus active implantation area and a fourth N plus active implantation area are arranged on the second N well; and the third N plus active implantation area is connected with the anode of a first diode link, and the second N plus active implantation area is connected with the anode of a second diode link. The bidirectional triode thyristor utilizes diodes as auxiliary triggering units, so the thyristor has adjustable and lower forward and reverse breakdown voltages, can be suitable to on-chip electronic static discharge (ESD) protection in a deep sub-micron technology, and can be particularly suitable to the ESD protection and application of a plurality of mixing voltage interface circuits or different power supply areas.

Description

technical field [0001] The invention belongs to the technical field of electrostatic protection for integrated circuits, and in particular relates to a bidirectional thyristor device based on diode auxiliary triggering. Background technique [0002] The phenomenon of electrostatic discharge (ESD) in nature poses a serious threat to the reliability of integrated circuits. In the industry, 30% of the failures of integrated circuit products are caused by electrostatic discharge, and the increasingly smaller process size and thinner gate oxide thickness greatly increase the probability of integrated circuit damage by electrostatic discharge. Therefore, improving the reliability of integrated circuit electrostatic discharge protection has a non-negligible effect on improving the yield of products. [0003] The modes of electrostatic discharge phenomena are usually divided into four types: HBM (Human Body Model), MM (Machine Discharge Model), CDM (Component Charge Discharge Model...

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Problems solved by technology

[0006] figure 1 It is a unidirectional SCR structure under the CMOS process. The trigger voltage of the unidirectional SCR is high in one direction, and it is a parasitic diode structure in the other direction. The trigger voltage is very low and cannot be adjusted. Therefore, the structure is very It is difficult to directly apply on-chip ESD protection, especially in some mixed voltage domain interface circuits that require bidirectional trigger voltage adjustable and low ESD protection

[0007] figure 2 It is a bidirectional SCR structure under the CMOS process. Compared with the unidirectional SCR structure, this structure has the same trigger voltage in both directions, but the trigger voltage value is also too high and cannot be adjusted. In the deep submicron process, it is difficult to Protect the fragile gate oxide

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