Manufacturing method of high-voltage device integrated circuit
A technology for integrated circuits and high-voltage devices, which is applied in the field of manufacturing integrated circuits for high-voltage devices, can solve the problems of long-term process time silicon surface consumption, SONOS memory low-voltage MOS device electrical characteristics and reliability performance changes, etc., to improve reliability, Avoid the effects of influence
Active Publication Date: 2014-05-21
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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[0004] However, in the actual process, since the high-voltage gate oxide layer of the high-voltage MOS device is relatively thick and is generally grown by a thermal oxidation process, it will take a long time to grow the thicker gate oxide layer of the high-voltage MOS device. The process time thus introduces additional thermal processes and silicon surface consumption, thereby causing serious changes in the electrical characteristics and reliability performance of the SONOS memory and the low-voltage MOS device
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[0023] Such as figure 1 Shown is the flowchart of the embodiment method of the present invention, Figure 2 to Figure 11 It is a structural diagram of devices in each step of the method of the embodiment of the present invention. The method of the embodiment of the present invention is used to form a high-voltage device integrated circuit including a SONOS memory, a high-voltage MOS device, and a low-voltage MOS device on the same silicon substrate, including the following steps:
[0024] Step 1, such as figure 2 As shown, the region where the high-voltage MOS device is formed on the silicon substrate is figure 2 The high-voltage MOS device region shown in , forms a high-voltage well region, and the process for forming the high-voltage well region includes an ion implantation process and a push-well annealing process.
[0025] Step two, such as figure 2 As shown, a field oxide layer is formed on the silicon substrate.
[0026] Step three, such as image 3 As shown, th...
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The invention discloses a manufacturing method of a high-voltage device integrated circuit, which comprises a silicon-oxide-nitride-oxide-silicon (SONOS) memory, a high-voltage modular operating system (MOS) device and a low-voltage MOS device which are formed on a silicon underlay. The manufacturing method is realized by embedding the manufacturing process of the high-voltage MOS device into the manufacturing process of the SONOS memory, a growth and pattern definition step of a high-voltage grid electrode oxidation layer and a high-voltage polycrystalline silicon grid electrode is advanced before all manufacturing steps of the SONOS memory and the low-voltage MOS device. Due to the adoption of the manufacturing method, the SONOS memory, the high-voltage MOS device and the low-voltage MOS device are simultaneously formed on the same silicon underlay, the influence of the grid electrode oxidation process of the high-voltage MOS device on properties of the SONOS memory and the low-voltage MOS device can be avoided, and the reliability of the grid electrode oxidation layer of the high-voltage MOS device can be improved.
Description
technical field [0001] The present invention relates to a manufacturing process method of high-voltage device semiconductor integrated circuits, in particular to a manufacturing method of high-voltage device integrated circuits comprising a SONOS memory, a high-voltage MOS device and a low-voltage MOS device formed on the same silicon substrate. Background technique [0002] With the development of integrated circuits, single-chip system integration has become a trend. This requires the intelligent control circuit of the MCU, the non-volatile memory circuit and the drive circuit to be present on one chip. The intelligent control circuit is a logic circuit, and because the operating voltage of the logic circuit is relatively low, the logic circuit is generally composed of low-voltage MOS devices. The non-volatile memory circuit is generally composed of Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) non-volatile memory. The operating voltage of the driving circuit is relatively...
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IPC IPC(8): H01L21/8234
Inventor 熊涛罗啸陈瑜陈华伦
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP