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Microwave terahertz wave detector and preparation method thereof

A terahertz and detector technology, applied in the field of microwave-terahertz wave photovoltaic devices, to achieve the effect of reducing complexity and cost

Active Publication Date: 2012-07-18
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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  • Application Information

AI Technical Summary

Problems solved by technology

The above THz detectors can only directly respond to power
And to respond directly to the frequency, it is necessary to establish a complex optical system

Method used

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  • Microwave terahertz wave detector and preparation method thereof
  • Microwave terahertz wave detector and preparation method thereof
  • Microwave terahertz wave detector and preparation method thereof

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Embodiment Construction

[0020] The invention discloses a microwave terahertz wave detector and a preparation method thereof, which provides a practical and effective way to solve the simultaneous response of power and frequency of terahertz wave detection.

[0021] The microwave terahertz wave detector of the present invention has a high electron mobility transistor as a basic structure, and the high electron mobility transistor is a GaAs / AlGaAs heterostructure, a GaN / AlGaN heterostructure or an InGaAs / InAlAs heterostructure. , the two-dimensional electron gas concentration in the two-dimensional electron gas channel is 10 -10 cm -2 ~10 -13 cm -2 . like figure 1 As shown, the high electron mobility transistor has a substrate 6 , a buffer layer 5 , an active layer 4 (two-dimensional electron gas channel), an isolation layer 3 , a doped layer 2 , and a capping layer 1 . The detector is provided with back grids 41, 42 and at least one strip structure with a length ranging from 1 μm to 1 mm on the m...

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Abstract

The invention discloses a microwave terahertz wave detector and a preparation method thereof, which are characterized in that: a high-electron-mobility transistor is adopted as a basic structure, the detector is provided with a back grid on a table-board of an active region and at least one strip-shaped structure with the length of one micrometer to one millimeter, wherein a positive grid which is in a concave structure or in a fingerlike shape is arranged inside the strip-shaped structure, two ends of the strip-shaped structure are respectively provided with an electrode to be in ohmic contact with a two-dimensional electron-gas passage, a distance between the concave position of the concave structure or a finger and the electrode is 0.5micrometer to 500micrometers, and the etching depth of the back grid is to directly reach the underlay. A complete and feasible preparation method of the detector is provided. By adopting the technical scheme, compared with a traditional detector system, the microwave terahertz wave detector has the remarkable advantages that: power response and frequency response to the radiation of the microwave-terahertz wave can be realized, and practical guarantee can be provided for reducing the complexity and the cost of the detector system.

Description

technical field [0001] The invention relates to a microwave-terahertz wave photovoltaic device, in particular to a microwave-terahertz wave detector capable of simultaneously responding to power and frequency and its manufacturing technology. Background technique [0002] At present, most of the detectors at home and abroad are used for continuous terahertz wave signal detection, such as Bolometer, Golay Cell, pyroelectric detector and Schottky diode, etc. It only responds to power, but the application of terahertz wave technology often requires spectral information. Frequency detection using this type of detector is generally achieved through spectral analysis or heterodyne circuits, which have the disadvantages of large, complex and expensive systems. Although infrared detectors using quantum well neutron band transitions can avoid the above disadvantages, they must work at extremely low temperatures. The short-channel field-effect transistor based on two-dimensional plas...

Claims

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Application Information

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IPC IPC(8): H01L31/112H01L31/18
CPCY02P70/50
Inventor 蒋春萍王亦
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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