Bi-based zinc oxide voltage dependent resistor material

A varistor, zinc oxide technology, applied in the direction of varistor, varistor core, etc., can solve the problems of small dielectric constant, complex preparation process, difficult to control, etc., to improve the dielectric constant, wide application Foreground effect

Inactive Publication Date: 2012-07-25
SHENZHEN SUNLORD ELECTRONICS
View PDF4 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The dielectric constant of zinc oxide-based varistor materials currently used is relatively small. By adjusting the proportion of additives, the dielectric properties of the material can be improved to a certain extent, but it still cannot meet the requirements of large-capa

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0026] 3. Preparation of composite materials:

[0027] The mole percentage is 5%~40% La 1-x Ca x MnO 3 It is ball-milled and mixed with the main material with a molar percentage of 60%-95%, dried, granulated, sieved and other steps to prepare powder, and finally sintered at 1000-1300°C to synthesize the composite material.

[0028] The above preparation method has the advantages of simple process, short production cycle, environmental protection, non-toxicity, and no need for reducing atmosphere.

[0029] In another embodiment, La 1-x Ca x MnO 3 The mole percentage of 10-30%, Ca doping amount is 0.7≤ x ≤0.8, the preparation method is the same as the above embodiment. The material in this example has a huge dielectric constant (the dielectric constant ranges from 1000 to 2850) and excellent pressure-sensitive characteristics, such as a higher nonlinear coefficient of ~40, and a small leakage current of ~10μA.

[0030] In yet another embodiment, La 1-x Ca x MnO 3 The mole percentage of ...

Embodiment 1

[0033] Bi series zinc oxide varistor material, the main material containing the following components, the content of which is in mole percentage: ZnO 96.0%, Bi 2 O 3 1.0%, Cr 2 O 3 0.5%, Co 2 O 3 0.7%, MnCO 3 0.7%, Sb 2 O 3 1.0%, Al(NO 3 ) 3 ·9H 2 O 0.1%; also includes La 1-x Ca x MnO 3 :among them x =0.65, the mole percentage is 20%, and the mole percentage of the main material is 80%. The preparation method is the same as the above-mentioned embodiment, and is briefly described below.

[0034] 1. According to the molecular formula La 1-x Ca x MnO 3 ( x =0.65), accurately weigh La according to the stoichiometric ratio 2 O 3 , CaCO 3 , MnCO 3 After being dried by ball milling and mixing, it is sintered at 1350℃ for 3 hours.

[0035] 2. Accurately weigh ZnO 96.0%, Bi 2 O 3 1.0%, Cr 2 O 3 0.5%, Co 2 O 3 0.7%, MnCO 3 0.7%, Sb 2 O 3 1.0%, Al(NO 3 ) 3 ·9H 2 O 0.1%, mix the materials by ball milling, and dry the main materials for use.

[0036] 3. Weigh the mole percentages as 2...

Embodiment 2

[0041] The difference from the first embodiment is: the added La 1-x Ca x MnO 3 Doping amount of Ca x =0.75.

[0042] Select 30 products for electrical measurement. The measured electrical meter is as follows:

[0043] Serial number Leakage current (μA) Potential gradient (V / mm) Dielectric constant 16.06568.602801.96 27.37580.212794.69 36.36582.902836.18 46.67583.262787.82 57.02585.952817.34 65.97574.942800.09 76.30587.352799.90 87.89594.352781.42 96.53588.312793.87 106.73579.312795.92 116.07582.552805.43 128.70571.072787.79 136.38571.962800.32 147.86578.742791.96 154.60566.372792.03 167.61588.112796.25 177.69573.212806.29 185.63580.362827.55 196.88597.182817.03 205.33569.972826.04 216.69575.712771.04 228.48574.072783.43 236.81590.712799.23 247.30592.092782.72 255.74582.852803.63 267.45585.512783.04 277.73580.472807.56 288.60594.302846.90 298.26582.582782.25 306.95580.562775.91

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Leakage currentaaaaaaaaaa
Login to view more

Abstract

A Bi-based zinc oxide voltage dependent resistor material is disclosed. The material comprises the following main materials by mole: 93-97% of ZnO, 0.5-1.5% of Bi2O3, 0.5-1.5% of Cr2O3, 0.5-1.5% of Co2O3, 0.5-1.5% of MnCO3, 0.5-1.5% of Sb2O3, and 0.5-1.5% of Al(NO3)3*9H2O. The Bi-based zinc oxide voltage dependent resistor material further comprises La[1-x]Ca[x]MnO[3], wherein x is larger than or equal to 0.6 and smaller than or equal to 0.8; the molar percentage of La[1-x]Ca[x]MnO[3] is 5-40%; and the molar percentage of main materials is 60-95%. The ceramic material provided by the invention has the advantages of high dielectric constant and excellent characteristics of the voltage dependent resistor, and is a composite voltage dependent material with wide application.

Description

Technical field [0001] The invention relates to the field of varistor materials, in particular to a Bi series zinc oxide varistor material. Background technique [0002] Zinc oxide-based ceramic varistor material is a widely used electronic material that suppresses transient surge voltage. The recent development of electronic technology has an urgent need for functions other than varistor functions, such as huge capacitance. . The dielectric constant of zinc oxide-based varistor materials currently used is relatively small. By adjusting the proportion of additives, the dielectric properties of the material can be improved to a certain extent, but it still cannot meet the requirements of large-capacity applications, such as Noise reduction and other aspects. Semiconductor TiO 2 , SrTiO 3 In addition to its pressure-sensitive function, its dielectric constant can usually reach several thousand, but its preparation process is relatively complicated and difficult to control. There...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C04B35/453H01C7/112
Inventor 蒋振龙冯志刚贾广平
Owner SHENZHEN SUNLORD ELECTRONICS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap