Check patentability & draft patents in minutes with Patsnap Eureka AI!

Photoetching method, photomask combination and exposure system

An exposure system and photolithography technology, applied in microlithography exposure equipment, photolithographic process exposure devices, optics, etc., can solve the problems of increasing manufacturing cost and time-consuming, saving costs and reducing the probability of re-manufacturing a mask Effect

Inactive Publication Date: 2012-07-25
SHENZHEN CHINA STAR OPTOELECTRONICS TECH CO LTD
View PDF9 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, if the pattern on the mask of the next exposure is only increased or decreased relative to the pattern on the mask of the previous exposure, it is only possible to change a new mask or make a new mask. For the above situation, Not only time-consuming, but also greatly increase the manufacturing cost

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Photoetching method, photomask combination and exposure system
  • Photoetching method, photomask combination and exposure system
  • Photoetching method, photomask combination and exposure system

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0024] The present invention will be described in detail below in conjunction with the accompanying drawings and embodiments.

[0025] see figure 1 , figure 1 It is a schematic flow chart of an embodiment of the photoetching method of the present invention, as shown in the figure, the method includes the following steps:

[0026] Step 101, forming a material layer to be patterned on a substrate;

[0027] Photolithography is the most commonly used technology in the manufacture of compound semiconductor devices, and is widely used in the production of planar devices and integrated circuits. For example, in the production of planar transistors and integrated circuits, multiple photolithography is required to achieve selectivity Diffusion and metal film wiring purposes.

[0028] Wherein, the substrate is a wafer, which is a silicon wafer used in the manufacture of silicon semiconductor integrated circuits.

[0029] The material layer includes dielectric materials such as a met...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a photoetching method, which comprises the steps that: a material layer to be patterned is formed on a substrate; a photoresist layer is formed on the material layer; at least two overlapped photomasks are used for carrying out exposure on the photoresist layer, corresponding patterns are arranged on each photomask, and the corresponding patterns arranged on at least two photomasks are overlapped and combined to form new patterns; the photoresist layer after the exposure is treated to obtain a hollow structure corresponding to the new patterns; and the hollow structure is used for etching the material layer for forming a patterning material layer. The invention also discloses a photomask combination and a photomask system. Through adopting the mode, the photoetching method has the advantages that the re-manufacture probability of the photomasks can be reduced, and the cost is saved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a photoetching method, a photomask combination and an exposure system. Background technique [0002] Photolithography is a technology for precise, tiny and complex graphics processing on the surface of thin films or metals, especially in the semiconductor manufacturing industry, it is an extremely important manufacturing technology. Photoetching process flow is a relatively complicated process, and exposure is the most important process link in photoetching technology. Exposure requires materials such as a mask, a light source, and a substrate. [0003] For the semiconductor manufacturing process, photolithography is a multi-step pattern transfer process. First, the required pattern is formed on the mask, and then the required pattern is transferred to each part of the wafer surface through the photolithography process. Floor. Specifically, first, the pattern is tran...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G03F1/80G03F1/56G03F7/20H01L21/02
CPCG03F7/20H01L21/02H01L21/0274G03F1/00G03F7/203G03F7/70466
Inventor 郑文达
Owner SHENZHEN CHINA STAR OPTOELECTRONICS TECH CO LTD
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com