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Data storage device and manufacturing method thereof

A manufacturing method and data storage technology, which are applied in the manufacturing/processing of electromagnetic devices, components of fixed capacitors, selection of materials, etc., can solve the problem of low ferroelectric performance of bismuth ferrite, poor performance of data storage devices, and unsuitable practical application. and other problems to achieve the effect of excellent performance

Inactive Publication Date: 2014-04-09
李宗霖
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in the data storage devices made of bismuth ferrite in the prior art, the ferroelectric properties of bismuth ferrite are low due to structural defects, so the performance of the data storage devices made is poor and not suitable for practical applications

Method used

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  • Data storage device and manufacturing method thereof

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Embodiment Construction

[0018] In order to make those skilled in the art understand the technical solutions of the present invention more clearly, the specific implementation manners thereof are described below in conjunction with the accompanying drawings.

[0019] The data storage device of the present invention includes transistors and capacitors, wherein such as figure 1 As shown, the capacitor includes a substrate 1, a lower electrode 2 located on the substrate 1, a conductive layer 3 formed on the lower electrode 2, a bismuth ferrite layer 4 formed on the conductive layer 3, and an upper electrode located on the bismuth ferrite layer 4. Electrode 5.

[0020] The conductive layer 3 is formed of a perovskite structure material, such as lanthanum nickelate or barium plumbate.

[0021] In one embodiment, the substrate 1 has a substrate 11 , a diffusion barrier layer 12 on the substrate 11 , and an adhesion layer 13 on the diffusion barrier layer 12 .

[0022] The substrate 11 is preferably a sili...

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Abstract

The invention discloses a data storage device with higher stability and low electric leakage, and a manufacturing method thereof. The method comprises the following steps of: forming a transistor; and forming a capacitor, wherein the method for forming the capacitor comprises the following steps of: forming a substrate, forming a lower electrode on the substrate, forming a conducting layer on the lower electrode, forming a bismuth titanate layer on the conducting layer and forming an upper electrode on the bismuth titanate layer, wherein the conducting layer is formed by a material having a perovskite structure, and the bismuth titanate layer is formed by a sputtering method or a chemical vapor deposition method.

Description

technical field [0001] The invention relates to a data storage device and a manufacturing method thereof. Background technique [0002] Existing data storage devices are generally divided into RAM and ROM. The access speed of RAM is high, but the stored content is lost after power off. The storage of ROM is not affected by electric current, but the access speed is low. With the research of various materials, people have developed ferroelectric data storage devices, magnetic data storage devices and phase change data storage devices. A data storage device unit in a data storage device generally includes a transistor and a capacitor, and a general capacitor includes a lower electrode, a dielectric layer, and an upper electrode. [0003] The emergence of complex iron materials has injected vitality into data storage devices. Complex iron materials are synthesized by ferroelectric materials and antiferromagnetic materials. The interaction between the two produces magnetoelect...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L43/12H01L43/10H01G4/008H01G4/08H10N50/01
Inventor 李宗霖
Owner 李宗霖