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Self-powered CMOS (Complementary Metal-Oxide-Semiconductor Transistor) image sensor

An image sensor and self-powered technology, which is applied in the directions of image communication, TV, color TV components, etc., can solve the problems of unable to realize self-powered image sensor, increase the cost of image sensor, large image sensor area, etc., to improve the conversion efficiency. Efficiency and image quality, avoid image quality degradation, cost reduction effect

Active Publication Date: 2014-11-26
重庆晟罡光电科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] In view of the above-mentioned shortcomings of the prior art, the object of the present invention is to provide a self-powered CMOS image sensor, which is used to solve the problem that the image sensor for detecting natural light in the prior art uses a filter and the area of ​​the image sensor is relatively large and the filter The performance change of itself leads to the deterioration of image quality and the problem of increasing the cost of the image sensor. It is also used to solve the problem that different image sensors need to be used in the prior art to realize the detection of ultraviolet light, visible light, and infrared light. Problems in technologies that do not enable self-powered image sensors

Method used

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  • Self-powered CMOS (Complementary Metal-Oxide-Semiconductor Transistor) image sensor
  • Self-powered CMOS (Complementary Metal-Oxide-Semiconductor Transistor) image sensor
  • Self-powered CMOS (Complementary Metal-Oxide-Semiconductor Transistor) image sensor

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Embodiment 1

[0066] Such as figure 1 As shown in FIG. 4, the present invention provides a self-powered CMOS image sensor, including at least:

[0067] The column bus 11, the amplifier 12, the current source unit 13, the image processing unit 14, and the energy storage unit 15 located in the substrate layer 1; the photosensitive layer 2 stacked on the substrate layer 1 is used to absorb light of different wavelengths A plurality of photosensitive layers, in the first embodiment, are three photosensitive layers for absorbing light in three wavelength bands, wherein, the first photosensitive layer is an infrared photosensitive layer 21, and the second photosensitive layer is a visible light photosensitive layer 22, The third photosensitive layer is an ultraviolet photosensitive layer 23; and a pixel readout unit 3 comprising at least a reset transistor 31, a source follower transistor 32, and a row selection transistor 33. In the first embodiment, the self-powered CMOS image sensor is 4T typ...

Embodiment 2

[0111] Embodiment 2 adopts basically the same technical solution as Embodiment 1, that is, the components included in the self-powered CMOS image sensor provided by Embodiment 2 and Embodiment 1, the related connection methods between the components and their working principles are basically the same, and the difference is The self-powered CMOS image sensor in the second embodiment is 3T type, and the pixel readout unit 3' is located in the substrate layer, and the photosensitive layer 2' is used to absorb three photosensitive layers of light in three wavelength bands, the first photosensitive layer It is a red photosensitive layer 21', the second photosensitive layer is a green photosensitive layer 22', and the third photosensitive layer is a blue photosensitive layer 23', and each photosensitive layer is made of silicon (Si) material.

[0112] It should be pointed out that light of different wavelengths has different response characteristics in the same semiconductor material...

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Abstract

The invention provides a self-powered CMOS (Complementary Metal-Oxide-Semiconductor Transistor) image sensor, which at least comprises a substrate layer, a photosensitive laminate laminated on the substrate layer and a pixel reading unit, wherein a line bus, an amplifier, a current source unit, an image processing unit and an energy storage unit for self power supply are located in the substrate layer; the photosensitive laminate comprises a plurality of photosensitive layers which cover the substrate layer in a lamination manner and are used for absorbing light of different wave bands, and each photosensitive layer at least comprises two switch elements and a photosensitive element connected between the two switch elements; and the pixel reading unit is located in the substrate layer or in at least one photosensitive layer of the photosensitive laminate. According to the invention, by the adoption of the photosensitive laminate of the lamination structure without optical filters, one pixel has the capacity of detecting the light of different wave bands and the image sensor has the function of self power supply, so that not only are the cost and complexity reduced and the conversion efficiency, the image quality and the integration degree of the image sensor greatly increased, but also the adaptability of the image sensor is enhanced while the light energy is utilized fully.

Description

technical field [0001] The invention relates to a CMOS image sensor, in particular to a self-powered CMOS image sensor, belonging to the technical field of semiconductors. Background technique [0002] As we all know, an image sensor is a semiconductor device that converts an optical image into an electrical signal. Image sensors can be roughly classified into Charge Coupled Device (CCD) and Complementary Metal Oxide Semiconductor (CMOS) image sensors. [0003] A CMOS image sensor is generally composed of a photosensitive element and a CMOS signal processing circuit. The current common CMOS image sensor is an active pixel image sensor (APS), which is mainly divided into reset transistor (Reset Transistor, RST), source follower transistor (Source Follower Transistor, SF) and row selection according to the number of transistors it includes. Three-tube image sensor (3T type) with transistor (Row Select, RS) and four-tube image sensor including reset transistor (RST), source f...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/146H04N5/374
Inventor 孙涛汪辉方娜田犁苗田乐陈杰
Owner 重庆晟罡光电科技有限公司