Beam-film four-land structured micro-pressure high-overload sensor chip

A sensor chip, high overload technology, applied to the measurement of the property and force of piezoelectric resistance materials, etc., can solve the problems of staying, not being able to adapt to the working environment of the aerospace field, and not being able to meet the precise measurement of the aerospace field

Inactive Publication Date: 2012-08-15
XI AN JIAOTONG UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] With the development of aerospace technology, my country's current MEMS micro-pressure sensors are still mainly at the KPa level, which cannot meet the needs of the aerospace field for Pa-level micro-pressure m

Method used

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  • Beam-film four-land structured micro-pressure high-overload sensor chip
  • Beam-film four-land structured micro-pressure high-overload sensor chip
  • Beam-film four-land structured micro-pressure high-overload sensor chip

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Embodiment Construction

[0021] Embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0022] refer to figure 1 and figure 2 , a beam-membrane four-island structure micro-voltage high-overload sensor chip, including a silicon substrate 1 on which four mass blocks 4-1, 4-2, 4-3, 4-4 and four single beams are processed 3-1, 3-2, 3-3, 3-4 and cross beam 3-5, mass blocks 4-1, 4-2, 4-3, 4-4 pass through four single beams 3-1, 3- 2. 3-3, 3-4 are connected to the silicon base 1, and the mass blocks 4-1, 4-2, 4-3, 4-4 are connected by cross beams 3-5, and the silicon base 1, mass block 4 -1, 4-2, 4-3, 4-4, the space surrounded by four single beams 3-1, 3-2, 3-3, 3-4 and cross beam 3-5 is processed into a 10-30μm film 2. The back of the silicon substrate 1 is bonded to the Pyrex7740 glass 5, refer to image 3 , Figure 4 and Figure 5 , the back of the mass block 4-1, 4-2, 4-3, 4-4 is thinned, so that there is a vacuum between the mass blo...

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Abstract

The invention provides a beam-film four-land structured micro-pressure high-overload sensor chip comprising a silicon substrate, wherein four mass blocks, four single beams and a cross beam are processed on the silicon substrate. The mass blocks are connected with the silicon substrate through the single beams, and are interconnected by virtue of the cross beam; a film is arranged in a space defined by the silicon substrate, the mass blocks, the single beams and the cross beam; the back of the silicon substrate is bonded with Pyrex7740 glass; the backs of the mass blocks are thinned, so that a gap is reserved between the mass blocks and the Pyrex7740 glass, and simultaneously, four anti-adsorption electrodes on the Pyrex7740 glass are inserted into the bonding area; a cavity formed between the film, the mass blocks and the Pyrex7740 glass is vacuumized; four piezoresistor bars are interconnected to form a semi-open loop Wheatstone bridge on the front of the silicon substrate; the whole rigidity is improved by using the four single beams and the cross beam; the stress is concentrated again; and the beam-film four-land structured micro-pressure high-overload sensor chip has the characteristics of high sensitivity and linearity, and simultaneously can resist 500 times of high overload.

Description

technical field [0001] The invention relates to the technical field of MEMS piezoresistive absolute pressure sensors, in particular to a beam-membrane four-island structure micro-pressure high overload sensor chip. Background technique [0002] With the development of micro-mechanical electronic system technology, MEMS micro-pressure sensors have been widely used in wind tunnel testing, biomedical electronics, petrochemical and other fields, especially in aerospace, which has strict requirements on sensor volume and weight. MEMS Sensors are undoubtedly the ideal choice. [0003] With the development of aerospace technology, my country's current MEMS micro-pressure sensors are still mainly at the KPa level, which cannot meet the needs of the aerospace field for Pa-level micro-pressure measurement, nor can it adapt to the working environment of the aerospace field, and cannot meet the needs of the aerospace field. The demand for precise measurement technology of deep and high-...

Claims

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Application Information

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IPC IPC(8): G01L1/18
Inventor 赵玉龙于忠亮孟夏薇刘岩张学锋田边
Owner XI AN JIAOTONG UNIV
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