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Thin-film transistor (TFT) array substrate and display device

An array substrate and single-layer technology, which is applied in the field of TFT array substrates and display devices, can solve the problems of low on-current, low carrier mobility, and reduced switching characteristics of thin film transistors.

Inactive Publication Date: 2012-08-29
BOE TECH GRP CO LTD
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Problems solved by technology

However, in the prior art, the active layer 13 of the thin film transistor is made of a-Si (amorphous silicon, amorphous silicon), and a-Si has a lower carrier due to the surface defects and amorphous arrangement of a-Si Mobility, the current carrier mobility of a-Si has been 1cm 2 Below / Vs, the conduction current of the TFT is lower, which reduces the switching characteristics of the thin film transistor

Method used

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  • Thin-film transistor (TFT) array substrate and display device
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  • Thin-film transistor (TFT) array substrate and display device

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Embodiment Construction

[0016] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0017] Such as figure 2 As shown, the embodiment of the present invention provides a TFT array substrate 20, including: data lines and gate lines, and thin film transistors formed in pixel units defined by the data lines and gate lines, and the thin film transistors include: gate 11. Gate insulating layer 12, active layer 13, ohmic contact layer 14, source electrode 15, and drain electrode 16; the active layer 13 is a superlattice structure, and the superlatt...

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Abstract

The embodiment of the invention provides a thin-film transistor (TFT) array substrate and a display device, relating to the technical field of displays, and aiming to improve closing and opening characteristics of a thin-film transistor. The TFT array substrate comprises a data line and a grid line, and a thin-film transistor formed in a pixel unit limited by the data line and the grid line; the thin-film transistor comprises a grid electrode, a grid insulation layer, an active layer, an ohmic contact layer, a source electrode and a drain electrode. The TFT array substrate is characterized in that the active layer has a superlattice structure; the superlattice structure comprises overlapped layer groups with a predetermined number; the layer groups comprise a semiconductor monolayer and a non-semiconductor monolayer. The TFT array substrate and the display device, provided by the embodiment of the invention, are suitable for production of array substrates and display devices.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a TFT array substrate and a display device. Background technique [0002] Both TFT-LCD (Thin Film Transistor-Liquid Crystal Display, Thin Film Transistor-Liquid Crystal Display) and AMOLED (Active Matrix / Organic Light Emitting Diode, Active Matrix Organic Light Emitting Diode) displays require TFT array substrates for display driving. [0003] Wherein, the TFT array substrate includes: data lines, gate lines, and thin film transistors and pixel electrodes are formed in the pixel units defined by the data lines and gate lines; wherein the sources of the thin film transistors are connected to the data lines, and the gates are connected to the gate lines , and the drain is connected to the pixel electrode. Such as figure 1 As shown, the thin film transistor in the TFT array substrate 10 in the prior art includes: a gate 11 , a gate insulating layer 12 , an active layer 13 , an oh...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/786H01L29/15H01L27/02
Inventor 戴天明姚琪张锋
Owner BOE TECH GRP CO LTD
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