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Method for preparing matrix of formed amorphous-carbon sacrificial grid

An amorphous carbon, sacrificial gate technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of insufficient adhesion between the subsequent amorphous carbon layer and the substrate, lower product yield, etc., to achieve savings Process cost, increase yield, improve the effect of adhesion

Active Publication Date: 2012-09-05
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In practice, due to the insufficient adhesion of the currently formed laminated structure to the subsequent amorphous carbon layer and the substrate, it is easy to cause a decrease in product yield. The reduction of yield rate has become a technical problem to be solved urgently by those skilled in the art

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  • Method for preparing matrix of formed amorphous-carbon sacrificial grid
  • Method for preparing matrix of formed amorphous-carbon sacrificial grid
  • Method for preparing matrix of formed amorphous-carbon sacrificial grid

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Embodiment Construction

[0024] The specific embodiment of the present invention will be further described below in conjunction with accompanying drawing:

[0025] Figure 1-7 It is a schematic structural flow diagram of the preparation method of the matrix of the shaped amorphous carbon sacrificial grid in the present invention.

[0026] Such as Figure 1-7 As shown, the method for preparing the substrate of the amorphous carbon sacrificial grid in the present invention, firstly, adopts a high oxidation process or a high temperature furnace tube process, and is equipped with an N well (N-well) 2, a P well (P-well) and The first oxide layer (buffer oxide) 5 is reacted on the silicon substrate 1 of the shallow trench (STI) 4; wherein, the first oxide layer 5 covers the N well (N-well) 2, the P well (P-well ) and the upper surface of the shallow trench (STI) 4; since the existence of the first oxide layer 5 can help the adhesion between the amorphous carbon layer and the substrate in the subsequent proc...

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Abstract

The invention relates to the field of semiconductor manufacturing, and particularly relates to a method for preparing a matrix of a formed amorphous-carbon sacrificial grid. According to the method for preparing the matrix of the formed amorphous-carbon sacrificial grid provided by the invention, through a stack-up structure which is composed of a first oxide layer and two amorphous carbon layers and formed by using a high-temperature oxidation or high-temperature furnace tube process, the improvement on the attachment of subsequent amorphous carbon layers and a base is facilitated, thereby increasing the product yield, and saving the process cost; and meanwhile, the method is simple in process and easy to operate.

Description

technical field [0001] The invention relates to the manufacturing field of semiconductor integrated circuits, in particular to a method for preparing a matrix for forming an amorphous carbon sacrificial gate. Background technique [0002] As the process node shrinks to 45nm and below, metal gates are widely used in order to meet new requirements caused by device size reduction. [0003] For example, the Chinese patent (authorized announcement number is CN 101593686) discloses a method for forming a metal gate, including: forming a gate dielectric layer on the substrate; forming a patterned amorphous carbon layer on the gate dielectric layer; The sidewall of the patterned amorphous carbon layer; forming an interlayer dielectric layer covering the patterned amorphous carbon layer and the sidewall; planarizing the interlayer dielectric layer and exposing the patterned amorphous carbon layer; using an oxygen ashing process to remove the patterned amorphous carbon layer, forming...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/28H01L21/283
Inventor 郑春生
Owner SHANGHAI HUALI MICROELECTRONICS CORP