Selecting method and selecting device for light energy conversion gain of photodiode in CMOS (complementary metal oxide semiconductor) sensor

A technology of CMOS sensor and photosensitive diode, which is applied in the field of CMOS sensor, can solve the problem of insufficient sensitivity and achieve the effect of avoiding flickering

Active Publication Date: 2012-09-26
BRIGATES MICROELECTRONICS KUNSHAN
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Problems solved by technology

[0006] How to solve the contradiction between the yellow band under high light and the insufficient sensitivity under dark light, which is difficult to reconcile, has become an urgent problem to be solved by those skilled in the art

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  • Selecting method and selecting device for light energy conversion gain of photodiode in CMOS (complementary metal oxide semiconductor) sensor
  • Selecting method and selecting device for light energy conversion gain of photodiode in CMOS (complementary metal oxide semiconductor) sensor
  • Selecting method and selecting device for light energy conversion gain of photodiode in CMOS (complementary metal oxide semiconductor) sensor

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[0057] The following description and accompanying drawings will make the above features and advantages of the present invention more apparent. The description is intended to illustrate the present invention, so as to facilitate a full understanding of the present invention, but should not be construed as a limitation of the present invention. Preferred embodiments according to the present invention will be described in detail below with reference to the accompanying drawings.

[0058] In order to solve the technical problems in the background technology, the present invention provides a method for selecting the light energy conversion gain of a photodiode in a CMOS sensor. figure 1 It is a schematic flow chart of the light energy conversion gain selection method of the photodiode in the CMOS sensor of the present invention, comprising the following steps:

[0059] Step S101 is executed to calculate the light intensity value.

[0060] Step S102 is executed to select a light e...

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Abstract

The invention discloses a selecting method and a selecting device for light energy conversion gain of a photodiode in a CMOS (complementary metal oxide semiconductor) sensor. The selecting method includes: computing a light intensity value, wherein the light intensity is related to image brightness Y, exposure time TEXP and current light energy conversion gain FD and second gain of the photodiode; and selecting the light energy conversion gain matched with the light intensity value from a light energy conversion gain series, wherein the light energy conversion gain series comprises at least two types of light energy conversion gain. The selecting device comprises a light intensity value computing unit and a light energy conversion gain selecting unit. According to the method and the device, the proper light energy conversion gain can be intelligently selected according to different light intensities, so that the contradictions of yellow belts in highlight and poor sensitivity in dark light can be effectively overcome.

Description

technical field [0001] The invention relates to a CMOS sensor, in particular to a method and a device for selecting a light energy conversion gain of a photosensitive diode in a CMOS sensor. Background technique [0002] Integrated circuit technology has penetrated into various fields. In the field of imaging, CCD and CMOS sensors are two commonly used image sensors. Both of them use photodiodes to perform photoelectric conversion and convert images into digital data. The main difference lies in the way digital data is transmitted. The charge data of each pixel in each row in the CCD sensor will be transmitted to the next pixel in turn, output from the bottom part, and then amplified and output by the amplifier on the edge of the sensor; in the CMOS sensor, each pixel will be adjacent to each other. An amplifier and A / D conversion circuit output data in a manner similar to a memory circuit. Compared with traditional CCD technology, CMOS sensors can better meet users' incre...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H04N5/351H04N5/374
Inventor 罗文哲任晓慧
Owner BRIGATES MICROELECTRONICS KUNSHAN
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